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Bonding with atomic rearrangement – new possibilities in material and devices technology

Hruban A., Strzelecka S., Wegner E., Pawłowska M., Gładki A., Stępniewski R., Jasiński J., Bożek R.

Optica Applicata

2002

Vol. 32, nr 3

355-364

In this work we present the results of investigations into direct bonding of AIIIBV bulk wafers and/or epitaxial structures. A good quality junction of GaAs–GaAs, GaAs–InP, GaAs–GaP has been obtained. Bonding of GaAs/GaAlAs/GaAs epi-structures with GaAs bulk substrates enabled obtaining universal compliant substrates. On these substrates InAs epitaxial layers have been deposited. Properties of the structures have been examined by Nomarski microscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM) and X-ray diffractometry