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1 Opto-Electronics Review

1 Han M. S.
1 Jeon H. C.
1 Kang C. K.
1 Kang T. W.
1 Kim D. Y.
1 Kim H. J.
1 Kim N. H.
1 Leem J. H.
1 Ryu Y. S.

1 1999

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Surface passivation of Hg0.8Cd0.2Te grown by MBE

Jeon H. C., Leem J. H., Ryu Y. S., Kang C. K., Kim N. H., Kang T. W., Kim H. J., Kim D. Y., Han M. S.

Opto-Electronics Review

1999

Vol. 7, No. 4

357-360

We have investigated on the surface passivation of HgCdTe with various surface treatment method; chemical oxidation, photochemical oxidation, and sulfur treatment. The density of fast state, slow state and fixed charge are analyzed by C-V method. We confirm that the sulfur treatment is the best surface passivation condition showing low density of the fast states and the fixed charge.