Wyniki wyszukiwania - BazTech

1

Electrode erosion mechanism in the rod plasma injector type of generator as deduced from the structure of irradiated substrates

Piekoszewski J., Stanisławski J., Grotzschel R., Matz W., Jagielski J., Szymczyk W.

Nukleonika

|

2002

|

Vol. 47, nr 3

113-117

EN

Titanium atoms were alloyed into a polycrystalline alundum substrate using a various number of intense pulses consisting of plasma of the working gas and vapor and low energy ions of Ti eroded from electrodes of the rod plasma injector type generator. It appears that at a single pulse titanium always forms a thin metallic film not mixed with the substrate material. With increasing number of pulses the amount of titanium atoms mixed into the substrate increases, whereas the thickness of the film - decreases. Analyses of phase composition and of structural properties, as well as computer simulations of thermal evolution brought the present authors to the conclusion that increase of number of pulses leads to decrease of melting temperature of the top layer of the substrate. It has also been confirmed that metallic ions eroded from electrodes do not undergo such acceleration like working gas ions do; their energy remains on the 200-300 eV level. It is concluded that erosion of the electrode material occurs during the last phase of the discharge via the vacuum arc mechanism.

2

Angular dependence of post-implantation damage recovery under 1 MeV electron irradiation in GaAs

Warchoł S., Rzewuski H., Krynicki J., Grotzschel R.

Nukleonika

|

2002

|

Vol. 47, nr 1

19-21

EN

The angular dependence of post-implantation defects removal in GaAs irradiated with 1 MeV electrons from a Van de Graaff accelerator has been investigated. The possible way of enhancing defect annealing consists in ionization created by electron irradiation. In this paper new results of a damage level behaviour dependent on 1 MeV electron beam angle irradiation are presented. GaAs single crystals of <100> orientation were implanted with 150 keV As+ ions at RT and then irradiated with a scanning beam of 1 MeV electrons at some selected angles. Rutheford Backscattering Spectroscopy (RBS) of 1.7 MeV 4He+ ions were used to determine the depth distribution of defect concentration before and after electron irradiation. The results relate clearly the ionization intensity created by the electron beam with angle of incidence with respect to the GaAs <100> orientation.

3

Formation of surface Pd-Ti alloys using the pulsed plasma beams

Piekoszewski J., Werner Z., Wieser E., Langner J., Grotzschel R., Reuther H., Jagielski J.

Nukleonika

|

1999

|

Vol. 44, nr 2

239-246

EN

The low-pressure discharge between two sets of cylindrical rod-type electrodes generates an intense pulse of a working gas plasma and a vapor cloud of an electrode material. The near surface layer of the substrate exposed to such beams becomes molten in a few microseconds and then rapid diffusion of pre-deposited atoms into this region occurs. The RBS spectra of Pd-Ti system formed on the Ti foil substrate show an efficient mixing of Pd and Ti components. Mixing extends up to over 1 μm distance.

PL

Niskociśnieniowe wyładowanie jarzeniowe między cylindrycznymi elektrodami prętowymi generuje impuls plazmy gazu roboczego i par materiału elektrod. Warstwa przypowierzchniowa podłoża poddanego działaniu takiego impulsu zostaje stopiona na kilka mikrosekund. W tym czasie zachodzi szybka dyfuzja atomów metalu zdeponowanego na powierzchni podłoża w głąb jego stopionej warstwy. Widma RBS wykazują efektywne mieszanie składników w układzie Pd-Ti, gdzie Ti jest materiałem podłoża w postaci folii, a Pd materiałem elektrod. Zasięg mieszania osiąga ponad 1 μm.

4

Imperfections of SOI films prepared by wafer bonding and layer exfoliation

Gawlik G., Piątkowski B., Jagielski J., Stonert A., Grotzschel R., Mirowski T.

Electron Technology

|

1999

|

Vol. 32, No. 1/2

138-141

EN

The <100> oriented n-type Si wafers of the diameter of 2 inches with resistivity of p = 6 ÷ 9 Ω ⋅ cm covered by 100nm SiO₂ film were subjected to 100 keV₂⁺ ion implantation with dose of 5 ÷ 6⋅10¹⁶H/cm². After implantation Si wafers were bonded with unimplantae oxidized (100nm SiO₂) Si substrates. In some cases surface oxide was removed from implanted wafers before wafer bonding. Exfoliation was performed in air during 1 h annealing at about 650°C. Some samples were subjected to the second step of the annealing at 1100°C for 1 h in Ar atmosphere. The exfoliated surface roughness estimated from AFM and profilometric measurements is about 20 ÷ 30 nm. Defect level in the crystal lattice was determined by RBS/channelling techique. The exfoliation process at 650°C leads to a defected surface layer. After annealing at 1100°C almost all defects in the SOI body generated by ion implantation and splitting formation are annealed out. The C-V characteristics of MOS capacitors prepared from materials annealed at 650°C indicate a presence of an electric charge built in the SOI structure. The results presented here show that high temperature annealing is indispensable for improving parameters of Silicon-On-Insulator (SOI) material.