Analysing the performance of H5 inverters in a photovoltaic system

• Autorzy: Mohd Mokhtar Sanusi Bin Mohd , Bakar Mohd Shafie , Jadin Mohd. Shawal

Identyfikatory

DOI

10.15199/48.2023.10.09

Warianty tytułu

PL

Analiza pracy falowników H5 w instalacji fotowoltaicznej

• Języki publikacji: EN

Abstrakty

EN

In this paper, a simulation study on H5 topology is presented. H5 topology is a commonly used inverter in photovoltaic (PV) systems because it is cost-effective, simple, and highly efficient. The study compares the performance of H4 topology, H5 topology, and an improved version of H5 topology in terms of leakage current. The power device was subjected to Unipolar Sinusoidal Pulse Width Modulation (SPWM) technique to determine the overall operation within a switching frequency range of 2 kHz to 20 kHz. The input system utilized a PV Matlab/Simulink model that specified a maximum power of 213.15 Watt and Open Circuit Voltage (Voc) of 36.3 V. The improved H5 topology demonstrated a significant reduction in leakage current, measuring 0.015 A compared to the conventional H5 topology's 0.02 A.

W artykule przedstawiono badanie symulacyjne topologii H5. Topologia H5 jest powszechnie stosowanym falownikiem w systemach fotowoltaicznych (PV), ponieważ jest opłacalna, prosta i wysoce wydajna. Badanie porównuje wydajność topologii H4, topologii H5 i ulepszonej wersji topologii H5 pod względem prądu upływu. Urządzenie zasilające zostało poddane technice jednobiegunowej sinusoidalnej modulacji szerokości impulsu (SPWM) w celu określenia ogólnej pracy w zakresie częstotliwości przełączania od 2 kHz do 20 kHz. System wejściowy wykorzystywał model PV Matlab/Simulink, który określał maksymalną moc 213,15 W i napięcie obwodu otwartego (Voc) 36,3 V. Ulepszona topologia H5 wykazała znaczne zmniejszenie prądu upływu, mierząc 0,015 A w porównaniu z konwencjonalną topologią H5 0,02A.

Słowa kluczowe

EN

photovoltaic system; PV; efficiency; inverter; leakage current

PL

instalacja fotowoltaiczna; sprawność; falownik; prąd upływu

• Wydawca: Wydawnictwo SIGMA-NOT
• Czasopismo: Przegląd Elektrotechniczny
• Rocznik: 2023
• Tom: R. 99, nr 10
• Strony: 48--50
• Opis fizyczny: Bibliogr. 20 poz., rys., tab.

Twórcy

autor

Mohd Mokhtar Sanusi Bin Mohd

• Paya Besar Community College

autor

Bakar Mohd Shafie

• Paya Besar Community College

• https://orcid.org/0000-0003-2905-6449

autor

Jadin Mohd. Shawal

• Faculty of Electrical and Electronics Engineering Technology, Universiti Malaysia Pahang (UMP)

• https://orcid.org/0000-0001-6253-7821

Bibliografia

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Uwagi

Opracowanie rekordu ze środków MNiSW, umowa nr SONP/SP/546092/2022 w ramach programu "Społeczna odpowiedzialność nauki" - moduł: Popularyzacja nauki i promocja sportu (2024).