Comparison between thermal simulation results generated by PLECS software and laboratory measurements

• Autorzy: Mysiński Wojciech , Sysło Bartłomiej

Identyfikatory

DOI

10.21008/j.1897-0737.2019.99.0003

• Konferencja: Computer Applications in Electrical Engineering (15-16.04.2019 ; Poznań, Polska)
• Języki publikacji: EN

Abstrakty

EN

This article deals with the subject of simulation of power losses and thermal processes occurring in semiconductors, as illustrated by an example of a DC/DC buck converter. The simulations were performed in PLECS software. The results obtained from the program were compared with measurement results of a laboratory converter model. The physical model is based on the same components as assumed in the simulation. Similarly, the parameters of the transistor control signal were the same. During operation of the converter, the temperature changes were analyzed using a K-type thermocouple. Based on the obtained results of the temperature measurement in the steady state of the converter operation, the correctness of the simulation carried out in the PLECS program was verified and confirmed.

Słowa kluczowe

EN

thermal simulation; PLECS; buck converter; thermal time constant; IGBT; diode; power losses

• Wydawca: Wydawnictwo Politechniki Poznańskiej
• Czasopismo: Poznan University of Technology Academic Journals. Electrical Engineering
• Rocznik: 2019
• Tom: No. 99
• Strony: 29--40
• Opis fizyczny: Bibliogr. 8 poz., rys., tab.

Twórcy

autor

Mysiński Wojciech

• Cracow University of Technology

autor

Sysło Bartłomiej

• Cracow University of Technology

Bibliografia

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• [3] Wintrich A., Ulrich N., Werner T., Reimann T., Application Manual, Power Semiconductors. Nuremberg: Semikron, 2015.
• [4] Górecki K., Zarębski J., The influence of the selected factors on transient thermal impedance of semiconductor devices, 2014 Proceedings of the 21st International Conference Mixed Design of Integrated Circuits and Systems (MIXDES), Lublin, 2014, pp. 309–314.
• [5] Gorecki K., Zarebski J., Nonlinear Compact Thermal Model of Power Semiconductor Devices, in IEEE Transactions on Components and Packaging Technologies, vol. 33, no. 3, pp. 643–647, Sept. 2010.
• [6] ON Semiconductor, IGBT, Ultra Field Stop, NGTB25N120FL3WG datasheet, Rev. 5, 2017.
• [7] STMicroelectronics, Galvanically isolated 4 A single gate driver, STGAP2S datasheet, June 2018.
• [8] Szekely V., Rencz M., Thermal dynamics and the time constant domain, in IEEE Transactions on Components and Packaging Technologies, vol. 23, no. 3, pp. 587–594, Sept. 2000.

Uwagi

Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2019).