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Calorimetric studies of the energy deposition on a material surface by plasma jets generated with QSPA and MPC devices

100%

Chuvilo A. A. , Garkusha I. E. , Makhlaj V. A. , Petrov Y. V.

Nukleonika

2012

tom Vol. 57, No. 1

49-53

Studies of the energy deposition by plasma jets incident on a material surface are of topical interest for both the fusion and plasma technology applications. In this paper the results are reported of a comparative study of plasma energy deposition on different material surfaces exposed to plasma jets of various duration and energy density, generated using the QSPA Kh-50 and the MPC devices. The spatial distribution of plasma energy density and the heat load on the surface were measured with a movable calorimeter. The measurements demonstrate that in the case of an exposure to QSPA plasma jets the absorbed heat load is approximately equal to 55-60% of the energy in the incident plasma jet. In the case of plasma jets generated using the MPC device the heat load on the target surface and was practically the same as for the QSPA jets, and additional shielding effects were found to be negligible due to the short duration of plasma jets.

On formation of thin SiO2/a-Si:H interface when biased oxidized semiconductor surface interacts with plasma or liquid solution

100%

Pinčík E. , Kobayashi H. , Takahashi M. , Brunner R. , Jurečka S. , Rusnák J.

Open Physics

2007

tom 5

nr 3

428-445

In this paper we present the results of research into a relation(s) between the bias voltage of an oxide/a-Si:H/c-Si sample during formation of very-thin and thin oxides and the resulting distribution of oxide/semiconductor interface states in the a-Si:H band gap. Two oxygen plasma sources were used for the first time in our laboratories for formation of oxide layers on a-Si:H: i) inductively coupled plasma in connection with its application at plasma anodic oxidation; ii) rf plasma as the source of positive oxygen ions for the plasma immersion ion implantation process. The oxide growth on a-Si:H during plasma anodization is also simply described theoretically. Properties of plasmatic structures are compared to ones treated by chemical oxidation that uses 68 wt% nitric acid aqueous solutions. We have confirmed that three parameters of the oxide growth process - kinetic energy of interacting particles, UV-VIS-NIR light emitted by plasma sources, and bias of the samples - determine the distribution of defect states at both the oxide/a-Si:H interface and the volume of the a-Si:H layer, respectively. Additionally, a bias of the sample applied during the oxide growth process has a similar impact on the distribution of defect states as it can be observed during the bias-annealing of similar MOS structure outside of the plasma reactor.

Studies of plasma interactions with tungsten targets in PF-1000U facility

100%

Ladygina M. S. , Skladnik-Sadowska E. , Zaloga D. R. , Sadowski M. J. , Kubkowska M. , Kowalska-Strzeciwilk E. , Krawczyk N. , Paduch M. , Miklaszewski R. , Garkusha I. E.

Nukleonika

2016

tom Vol. 61, No. 2

149--153

This paper presents results of experimental studies of tungsten samples of 99.95% purity, which were irradiated by intense plasma-ion streams. The behaviour of tungsten, and particularly its structural change induced by high plasma loads, is of great importance for fusion technology. The reported measurements were performed within a modifi ed PF-1000U plasma-focus facility operated at the IFPiLM in Warsaw, Poland. The working gas was pure deuterium. In order to determine the main plasma parameters and to study the behaviour of impurities at different instants of the plasma discharge, the optical emission spectroscopy was used. The dependence of plasma parameters on the initial charging voltage (16, 19 and 21 kV) was studied. Detailed optical measurements were performed during interactions of a plasma stream with the tungsten samples placed at the z-axis of the facility, at a distance of 6 cm from the electrode outlets. The recorded spectra showed distinct WI and WII spectral lines. Investigation of a target surface morphology, after its irradiation by intense plasma streams, was performed by means of an optical microscope. The observations revealed that some amounts of the electrodes material (mainly copper) were deposited upon the irradiated sample surface. In all the cases, melted zones were observed upon the irradiated target surface, and in experiments performed at the highest charging voltage there were formed some cracks.