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Photoluminescence study of ZnO/CdS/Cu(In,Ga)Se2 solar cells

100%

Bacewicz R. , Żuk P. , Trykozko R.

Opto-Electronics Review

2003

tom Vol. 11, No. 4

277-280

Photoluminescence (PL) of the absorber layer of ZnO/CdS/Cu(In,Ga)Se2 solar cells has been studied. Baseline process solar cells as well as structures subject to a damp heat treatment and sodium - free structures have been investigated. The excitation intensity and temperature dependence of the photoluminescence spectra have been measured. A large blue shift of the photoluminescence bands for increasing excitation intensity has been observed with a per decade shift value ranging from 10 meV for baseline cells to 35 meV for Na free cells. This is characteristic behaviour for spectral bands due to transitions involving random potential fluctuations in highly compensated In-rich near-interface layer of the Cu(In,Ga)Se2 film. The temperature evolution of the spectra indicates two types of PL transitions: the tail-impurity and band-impurity transitions. The change of the PL spectra upon the damp heat treatment is discussed.

On formation of thin SiO2/a-Si:H interface when biased oxidized semiconductor surface interacts with plasma or liquid solution

88%

Pinčík E. , Kobayashi H. , Takahashi M. , Brunner R. , Jurečka S. , Rusnák J.

Open Physics

2007

tom 5

nr 3

428-445

In this paper we present the results of research into a relation(s) between the bias voltage of an oxide/a-Si:H/c-Si sample during formation of very-thin and thin oxides and the resulting distribution of oxide/semiconductor interface states in the a-Si:H band gap. Two oxygen plasma sources were used for the first time in our laboratories for formation of oxide layers on a-Si:H: i) inductively coupled plasma in connection with its application at plasma anodic oxidation; ii) rf plasma as the source of positive oxygen ions for the plasma immersion ion implantation process. The oxide growth on a-Si:H during plasma anodization is also simply described theoretically. Properties of plasmatic structures are compared to ones treated by chemical oxidation that uses 68 wt% nitric acid aqueous solutions. We have confirmed that three parameters of the oxide growth process - kinetic energy of interacting particles, UV-VIS-NIR light emitted by plasma sources, and bias of the samples - determine the distribution of defect states at both the oxide/a-Si:H interface and the volume of the a-Si:H layer, respectively. Additionally, a bias of the sample applied during the oxide growth process has a similar impact on the distribution of defect states as it can be observed during the bias-annealing of similar MOS structure outside of the plasma reactor.