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1
Content available remote X-Ray Study of Synthetic Alunite
100%
Paszkowicz W. , Dynowska E. , Świerkocki J.
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nr 4
621-627
EN
Synthetic alunite was obtained by two different synthesis methods. Powder data obtained with a standard Bragg-Brentano geometry of two analyzed samples are reported for a broad angular range. The chemical analysis as well as the unit-cell dimensions indicate that the analyzed alunite is K and Al deficient and contains excess water. A need for high resolution diffraction experiments is expressed.
2
Content available remote Application-of Quasi-Forbidden Reflections for Determination of Composition of Pseudobinary Semiconductors
100%
Bąk-Misiuk J. , Paszkowicz W. , Domagała J.
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nr 4
681-684
EN
An application of X-ray quasi-forbidden reflection method of composition determination for A^{II}B^{VI} pseudobinary compounds is discussed. Three typical cases of the intensity dependence on the composition, as well as the choice of the most suitable reflection are presented.
3
Content available remote Composition Determination of Some A^{II}B^{VI} Ternary Semiconductors from Quasi-Forbidden Reflection Intensity
88%
Bąk-Misiuk J. , Domagała J. , Dynowska E. , Miotkowska S. , Paszkowicz W.
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nr 4
575-578
EN
The aim of the present paper is to study the possibility of application of the X-ray quasi-forbidden reflection method to the composition determination of the sphalerite-type Cd_{1-x}M_{x}Te = Mg, Zn, Mn) single crystals. The method is based on the property of quasi-forbidden reflections that their integral intensity is very sensitive to composition and weakly sensitive to crystal lattice defects. An example of application for a Cd_{1-x}Mn_{x}Te single crystal is presented.
4
Content available remote X-Ray Photoelectron Spectroscopy and X-Ray Diffraction Studies of Zn_{1-x}Co_{x}S Diluted Magnetic Semiconductor Crystals
75%
Ławniczak-Jabłońska K. , Gołacki Z. , Paszkowicz W. , Iwanowski R. , Johansson L. , Heinonen M.
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nr 4
633-636
EN
X-ray photoelectron spectroscopy and powder X-ray diffraction studies of diluted magnetic semiconducting alloys Zn_{1-x}Co_{x}S, in the composition range 0 ≤ x ≤ 0.18, were performed. The analysis of XPS spectra has shown that admixture of Co into ZnS lattice does not affect the shape and position of Zn 2p core level, whereas certain modification of the S 2p peak shape was observed. The detected binding energy of Co indicated similarity between Co-S and Co-O bond structure. Significant contributions of Co 3d^{7} electrons to the valence band density of states were revealed.
5
Content available remote Magnetic and Ferroelectric Ordering in the TbMnO_3 Film
63%
Sazanovich A. , Nikolaenko Y. , Paszkowicz W. , Mikhaylov V. , Dyakonov K. , Medvedev Y. , Nizhankovskii V. , Dyakonov V. , Szymczak H.
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nr 1
128-130
EN
Measurements of magnetization and electric polarization performed for the TbMnO_3 film grown onto the single crystal [100] SrTiO_3 substrate using magnetron sputtering technique exhibit series of anomalies related to the magnetic and electric ordering of the Tb^{3+} and Mn^{3+} sublattices. The detailed temperature dependences of the electric polarization and dielectric constant of the TbMnO_3 film have shown that the ferroelectric phase appears below 30 K in magnetic field H > 1 T applied in-plane and out-of-plane of the film.
6
Content available remote ZnO by ALD - Advantages of the Material Grown at Low Temperature
63%
Guziewicz E. , Godlewski M. , Krajewski T. , Wachnicki Ł. , Łuka G. , Paszkowicz W. , Domagała J. , Przeździecka E. , Łusakowska E. , Witkowski B.
Acta Physica Polonica A
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2009
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tom 116
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nr 5
814-817
EN
The 3D-architecture is a prospective way in miniaturization of electronic devices. However, this approach can be realized only if metal paths are placed not only at the top, but also beneath the electronic parts, which imposes drastic temperature limitations for the electronic device processing. Therefore last years a lot of investigations are focused on materials which can be grown at low temperature with electrical parameters appropriate for electronic applications. Zinc oxide grown by the atomic layer deposition method is one of the materials of choice. We obtained ZnO-ALD films at growth temperature range between 100°C and 200°C, and with controllable electrical parameters. Free carrier concentration was found to scale with deposition temperature, so it is possible to grow ZnO films with desired conductivity without any intentional doping. We used correlation of electrical and optical parameters to optimize the deposition process. Zinc oxide layers obtained in that way have free carrier concentration as low as 10^{16} cm^{-3} and high mobility (10-50 cm^{2}/(Vs)), which satisfies requirements for a material used in three-dimensional memories.
7
Content available remote Structure Dependent Conductivity of Ultrathin ZnO Films
63%
Snigurenko D. , Kopalko K. , Krajewski T. , Łuka G. , Gierałtowska S. , Witkowski B. , Godlewski M. , Dybko K. , Paszkowicz W. , Guziewicz E.
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nr 6
1042-1044
EN
Zinc oxide films dedicated for hybrid organic/inorganic devices have been studied. The films were grown at low temperature (100°C, 130C and 200°C) required for deposition on thermally unstable organic substrates. ZnO layers were obtained in atomic layer deposition processes with very short purging times in order to shift a structure of the films from polycrystalline towards amorphous one. The correlation between atomic layer deposition growth parameters, a structural quality and electrical properties of ZnO films was determined.
8
Content available remote Physical Properties of ZnCoO Tetrapods and Nanofibers
51%
Gas K. , Fronc K. , Dziawa P. , Knoff W. , Wojciechowski T. , Zaleszczyk W. , Baranowska-Korczyc A. , Morhange J. , Paszkowicz W. , Elbaum D. , Karczewski G. , Wojtowicz T. , Szuszkiewicz W.
Acta Physica Polonica A
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2009
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tom 116
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nr 5
868-870
EN
In this paper the physical properties of two types of Co-doped ZnO nanostructures: tetrapods and nanofibers grown by a rapid thermal evaporation process and prepared by the electrospinning technique, respectively, were investigated and analyzed. Surface morphology of the samples was examined using scanning electron microscopy. X-ray diffraction measurements showed hexagonal wurtzite crystal structure of both types of investigated nanostructures. Both X-ray diffraction and Raman scattering data confirmed high phase purity of the samples. The magnetic properties studied with the use of the SQUID magnetometer confirmed a presence of ferromagnetic order in analyzed nanostructures. The observed photoluminescence spectra exhibited two groups of lines. The first one, in the ultraviolet spectral range, is due to the optical transitions close to ZnO band gap, the second one in the red region is most probably related to the Co^{2+} d-d internal transitions. The influence of native defects on the optical properties is also shown and discussed. All results reported here lead us to the conclusion that in the mixed crystal nanostructures obtained, a fraction of the Zn^{2+} ions is substituted by Co^{2+} ions.
9
Content available remote ZnCoO Films by Atomic Layer Deposition - Influence of a Growth Temperature οn Uniformity of Cobalt Distribution
51%
Łukasiewicz M. , Witkowski B. , Godlewski M. , Guziewicz E. , Sawicki M. , Paszkowicz W. , Łusakowska E. , Jakieła R. , Krajewski T. , Kowalik I. , Kowalski B.
Acta Physica Polonica A
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2009
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tom 116
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nr 5
921-923
EN
We report on the structural, electrical and magnetic properties of ZnCoO thin films grown by atomic layer deposition method using reactive organic precursors of zinc and cobalt. As a zinc precursor we applied either dimethylzinc or diethylzinc and cobalt(II) acetyloacetonate as a cobalt precursor. The use of these precursors allowed us the significant reduction of a growth temperature to 300°C and below, which proved to be very important for the growth of uniform films of ZnCoO. Structural, electrical and magnetic properties of the obtained ZnCoO layers will be discussed based on the results of secondary ion mass spectroscopy, scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, atomic force microscopy, Hall effect and SQUID investigations.
10
Content available remote Photoluminescence Properties of ZnO and ZnCdO Nanowires
51%
Zaleszczyk W. , Fronc K. , Aleszkiewicz M. , Paszkowicz W. , Wróbel J. , Dłużewski P. , Kret S. , Klepka M. , Kłopotowski Ł. , Karczewski G. , Wojtowicz T.
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nr 2
357-362
EN
We report on the photoluminescence studies of ZnO and ZnCdO nanowires grown on SiO_2/Si substrates by low-pressure vapor phase synthesis. X-ray diffraction and transmission electron microscopy measurements show that the crystallographic structure of these ZnO and ZnCdO nanowires is of wurtzite-type with a high crystal perfection. Surface morphology of samples was determined by scanning electron microscopy and atomic force microscopy. The photoluminescence spectra of as-grown nanowires, nanowires extracted from the substrate and deposited onto Si wafer, and nanowires dispersed in ethanol by sonication were investigated at room temperature and compared to each other. The temperature dependence of the near band-gap photoluminescence emitted by the as-grown nanowires was also measured and analyzed.
11
Content available remote Photoluminescence Properties of ZnO Nanowires Grown on Ni Substrate
51%
Zaleszczyk W. , Fronc K. , Przeździecka E. , Janik E. , Czapkiewicz M. , Wróbel J. , Paszkowicz W. , Kłopotowski Ł. , Karczewski G. , Wojtowicz T. , Presz A.
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nr 5
1451-1456
EN
Photoluminescence studies of zinc oxide nanowires produced by a carbo-thermal method on a nickel foil substrate are reported. Two types of as-grown samples: the first - containing only buffer film, and the second - containing both zinc oxide nanowires and buffer film grown in the same technological process, were investigated by means of the temperature-dependent photoluminescence. X-ray diffraction measurements of buffer film show that it is polycrystalline and is composed from wurtzite-type ZnO (main phase) and includes minority phases: rock salt type (Ni,Zn)O and hexagonal C₃N₄. The shape of the apparently monocrystalline nanowires is characterized by hexagonal section matching with the expectations of the hexagonal ZnO structure. The presence of LO-phonon replicas in photoluminescence spectra for the second sample is used as an argument for confirmation that ZnO nanowires are single crystalline. The method of growth of ZnO nanowires on nickel oxide opens perspectives to produce Zn_{1-x}Ni_{x}O diluted magnetic semiconductor nanowires.
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