Starting from the general equivalent model of a solar cell including junction capacitance and shunt resistance connected with surface recombination of photocarriers, the phenomenon of open circuit voltage decay was analysed. The time decay of a photovoltage is influenced by the junction capacitance time constant to a great extent. The time constants of both depletion layer and diffusion capacitances varying with applied bias voltage were examined. The detailed analysis of these time constants allowed for evaluation of the forward bias voltage that should be applied to c-Si solar cell to minimize this detrimental effect. As it was shown, that voltage bias can be easily generated by the constant illumination, the so-called bias light. Impedance measurements of solar cells in the frequency range 10 Hz–100 kHz and with varying voltage bias allowed for additional characterisation of the junction capacitance and resistance. The measured parameters agree well with these used in model calculation of a photovoltage decay.
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