The influence of structural disorder and magnetism on the resistivity of the amorphous Co_{x}Ni_{70-x}Fe_{5}Si_{15}B_{10} ribbons was investigated. The resistivity vs. alloy composition shows parabolic-like behaviour. In the thermal behaviour, resistivities of the samples show apparent magnetic contribution. They also exhibit minima at temperatures which can be correlated with the Curie temperatures. Above T ≥ 0.5T_{C} resistivity increases linearly with increasing temperature. This effect is seemingly due to electron-phonon scattering. Obviously, the chemical and positional disorder is responsible for the major part of resistivity.
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Multicomponent single phase alloys were synthesized according to the idea of iron-average atom system. X-ray diffraction shows formation of bcc phase and traces of unidentified phase. Mössbauer spectra indicate presence of two components with different hyperfine magnetic field distributions. The high field component corresponds to the majority ferromagnetic phase. Few per cent of iron builds low field component. The dominant effect of annealing consists in an increase of the low field component.
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The electrical and magnetic properties of Fe_{0.5}A_{0.5} alloys are presented, where the A corresponds to various compositions of the elements: A = (Al, Si, V, Cr, Co, Ga, Ni, Ge). The system is closely related to the known family of high entropy alloys. The samples were synthesized by arc melting and/or melt spinning technique and exhibit a regular type of crystal structure. Lattice parameters are systematically smaller than the estimates based on metallic radiuses of the elements. Temperature dependences of resistivities show maxima for some compositions. This behavior is consistent with results of electronic structure calculations, where a low density of states at the Fermi level were predicted. Also the measured magnetic moments are in good agreement with results of calculations. It is thus presented that some physical properties can be designed by appropriate choice of the chemical composition within the same simple structure.
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