The phase diagrams of AgGaS2/AgInS2/-HgS sections in the quasi-ternary Ag2S-HgS-Ga2S3/In2S3/ systems have been constructed using differential thermal, X-ray phase and microstructural analyses. AgGaS2-HgS section is quasi-binary and belongs to the eutectic type. The coordinates of the eutectic point are 76 mol% HgS and 1018 K. AgInS2-HgS is not quasi-binary above the solidus. In the AgInS2-HgS system the limited solid solutions within the composition range 0-2 mol% HgS and 82-98 mol% HgS at 670 K were discovered. The compounds AgInS2 and HgS form limited solid solutions within the composition range 0-2 mol% HgS and 71-95 mol% HgS at 670 K. The solid solutions, in the part HgS-rich, are created on the basis of the low temperature cubic structure (a-HgS) on both sections.
Phase equilibria in the CuGaTe2-HgTe and CuInTe2-HgTe systems are investigated by differential thermal, X-ray phase and microstructural analyses. Both systems are of quasibinary, peritectic type, resulting in the formation of solid solutions. Solid solubility in HgTe varies from 0-31 mol% for Cu GaTe2 and from 0-64 mol% for CuInTe2. The solid solution based on CuInTe2 does not exceed 4mol% HgTe and the one based on CuGaTe2 contains less than 2 mol% HgTe.
Differential thermal analysis, X-ray diffraction, and metallography were used to study the interaction between the components of the quasi-ternary CdSe–Ga2Se3–Sb2Se3 system. Phase diagrams of three vertical sections, an isothermal section at 670K, aswell as a projection of the liquidus surface have been constructed. The type of mono- and invariant processes in the system has been investigated and the coordinates of invariant points have been determined. Present results can be employed for the growth of CdGa2Se4 single crystals from non-stoichiometric melts.
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