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Synthesis and photoluminescence properties of MZr2(PO4)3:Eu3+; Bi3+ (M=Na; K) phosphors

100%

He X. , Huang J. , Zhou L. , Pang Q. , Gong F.

Open Physics

2012

tom 10

nr 2

514-518

A series of new red phosphors, MZr2(PO4)3:Eu3+; Bi3+ (M=Na; K), were synthesized using the solidstate reaction method, and their photoluminescence spectra were measured. The MZr2(PO4)3:Eu3+; Bi3+ (M=Na; K) phosphors were efficiently excited by an ultraviolet (UV; 395 nm) source, and showed intense orange-red emission at 595 nm. Further investigation of the concentration-dependent emission spectra indicated that the MZr2(PO4)3:Eu3+; Bi3+ (M=Na; K) phosphors exhibit the strongest luminescence intensity when y = 0.01 in NaZr2(0:95−y)(PO4)3:Eu0.103+, Bi2y 3+ and y = 0.09 in NaZr2(0.95−y)(PO4)3:Eu0.103+, Bi2y 3+, whereas the relative PL intensity decreases with increasing Bi3+ concentration due to concentration quenching. The addition of Bi3+ widens the excitation band of NaZr2(0.95−y)(PO4)3:Eu0.103+, Bi2y 3+ around 320 nm, which provides the useful idea of broadening the excitation band around 300–350 nm to fit the ultraviolet chip.

Synthesis and luminescence properties of the red phosphor CaZrO3:Eu3+ for white light-emitting diode application

86%

Huang J. , Zhou L. , Lan Y. , Gong F. , Li Q. , Sun J.

Open Physics

2011

tom 9

nr 4

975-979

Eu3+-doped CaZrO3 phosphor with perovskite-type structure was synthesized by the high temperature solid-state method. The samples were characterized by X-ray diffraction, scanning electron microscopy, fluorescence spectrophotometer and UV-vis spectrophotometer, respectively. XRD analysis showed that the formation of CaZrO3 was at the calcinations temperature of 1400°C. The average diameter of CaZrO3 with 4 mol% doped-Eu3+ was 2µm. The PL spectra demonstrated that CaZrO3:Eu3+ phosphor could be excited effectively in the near ultraviolet light region (397 nm) and emitted strong red-emission lines at 616 nm corresponding to the forced electric dipole 5 D 0 → 7 F 2 transitions of Eu3+. Meanwhile, the light-emitting diode was fabricated with the Ca0.96ZrO3:Eu0.043+ phosphor, which can efficiently absorb ∼ 400 nm irradiation and emit red light. Therefore Ca0.96ZrO3:Eu0.043+ may have applications for a near ultraviolet InGaN chip-based white light-emitting diode.