Wyniki wyszukiwania - Biblioteka Nauki

Nowa wersja platformy, zawierająca wyłącznie zasoby pełnotekstowe, jest już dostępna.
Przejdź na https://bibliotekanauki.pl

Ograniczanie wyników

Znaleziono wyników: 4

Liczba wyników na stronie

Wyniki wyszukiwania

Sortuj według:

Ogranicz wyniki do:

Relations between elements r²-r

100%

Prószyński A.

2007

tom Vol. 55, no 4

317-323

We prove that generating relations between the elements [r] = r² - r of a commutative ring are the following: [r + s] = [r] + [s] + rs[2] and [rs] = r²[s] + s[r].

Stress modification in gold metal thin films during thermal annealing

51%

Prószyński A. , Chocyk D. , Gładyszewski G.

2009

tom Vol. 39, nr 4

705-710

Stress evolution during deposition of 50 nm Au thin films by thermal evaporation in a UHV system and then stress modification during thermal vacuum annealing have been performed. For stress measurement a substrate curvature approach has been applied. The changes in stress versus temperature linked to a modification of microstructure has been interpreted. To obtain any information about structural changes in the film X-ray diffraction measurements has been performed. We can conclude from the measurements that during the first cycle some irreversible structural modifications occur in a metal film.

Determination of stress in Au/Ni multilayers by symmetric and asymmetric X-ray diffraction

38%

Chocyk D. , Prószyński A. , Gładyszewski G. , Labat S. , Gergaud P. , Thomas O.

tom Vol. 32, nr 3

333-337

A stress analysis was done for Au/Ni multilayers prepared by molecular beam epitaxy and by thermal evaporation. The lattice parameters in the growth and in-plane directions of multilayer constituents were directly determined by the analysis of the symmetric and asymmetric X-ray diffraction (XRD) profiles. The q–2q XRD profiles were interpreted using the 1D model of non-ideal superlattice structure, whereas the asymmetric XRD profiles using the 3D model. Both models were based on the Monte Carlo simulation and on the kinematical theory of scattering. It was shown that considerable stress was encountered in multilayers with in-plane structural cohere.

Measurements of stress during ion irradiation

38%

Pieńkos T. , Gładyszewski L. , Chocyk D. , Prószyński A. , Gładyszewski G. , Martin F. , Jaouen C.

tom Vol. 32, nr 3

421-424

The exemplary results obtained with a simple optical set-up for the measurement of curvature radius during ion implantation are presented. The Kr ion irradiation was performed for silicon substrate without a film. After the irradiation the implanted region of silicon was under compressive stress. Maximum of the stress was evidenced for a dose of 1×1014 ions/cm2. The optical set-up is very flexible and may cooperate with various apparatus