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The Synthesis and Morphology of TlxSy Layers Deposited on the Surface of Polyethylene Films from Solution

100%

Bruzaite I. , Snitka V. , Janickis V.

Polish Journal of Chemistry

2007

tom Vol. 81, nr 12

2031-2038

Thal lium sul fide layers will be formed on the surface of low-density polyethylene (PE) if the PE layer is sulphured in a solution of higher polythionic acid H2S33O6, and then immersed in the alkaline solution of thallium(I) sulfate. Sulphurcon centration in creases on PE sur face with the in crease of the sulphurization time. The amount of thallium in the TlxSy layers depends on a sulphur concentration sorbed-diffused into PE. Three phases TlS, Tl2S and Tl2S2 were identified by X-ray diffraction analysis in thallium sulfide layers. Scanning Electron (SEM) and Atomic Force (AFM) microscopies were used to characterize surface morphology of thallium sulfide layers. The films de posited on the PE surface have a non-homogeneous structure and consist of separated is lands. The process of their growth on PE surface starts from nucleation sites creating is lands of TlS with diameter in tenths of microns which increase up to 9 mi during 1 h deposition.

Photosensitive macroporous silicon based structures

63%

Pačebutas V. , Grigoras K. , Jasutis V. , Kačiulis S. , Mickevičius S. , Sabataityte J. , Snitka V. , Šimkiene I.

Opto-Electronics Review

2000

tom Vol. 8, No. 4

388-392

Macroporous silicon prepared in n-type silicon have been used for a photosensitive device formation. Boron-doped spun-on layer was applied for p+ emitter formation of the devices. The obtained structures were investigated by AFM and electron microscopy, photosensitivity and the photocurrent spectra were measured to evaluate the influence of porous layer and boron diffusion conditions. Unusually fast boron diffusion through the porous emitter was investigated, stipulating the p+ -n junction to be positioned 2.5 µm deeper the pores bottom. This effect was explained by a presence of local electric fields, caused by tensions present at the border between PS layer and crystalline substrate and by possible deeper nanoporous structure, what was partially proofed by AFM.