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Effect of uniform stress on SiO2/Si interface in oxygen-implanted Si and SIMOX structures

100%

Misiuk A. , Bryja L. , Kątcki J. , Ratajczak J.

tom Vol. 32, nr 3

397-407

The effect of high temperature–hydrostatic pressure (HT–HP) treatment on SiO2/Si interface in oxygen-implanted (oxygen doses up to 2×1018 cm–2) silicon (Si:O) and reference silicon-on-insulator (SOI) samples has been investigated by the transmission electron microscopy (TEM) and the photoluminescence (PL) methods. The Si:O and SOI samples have been HT–HP treated at 1230–1570 K under argon pressure up to 1.23 GPa for 5 h. Depending on the dose of implanted oxygen and other implantation and HT–HP treatment conditions, the dispersed SiO2–x precipitates or buried SiO2 layer are created in the Si bulk. The HT–HP treatment affects the creation of dislocations and other defects at the SiO2/Si interface; this effect is related in part to a decreased misfit at the SiO2/Si boundary at HT–HP.

Spectroscopic properties of CdS nanoparticles embedded in sol-gel silica glasses

63%

Stręk W. , Makuszewski K. , Jasiorski M. , Łukowiak E. , Bryja L. , Ciorga M. , Sitarek P. , Misiewicz J.

1999

tom Vol. 29, nr 3

401-405

Absorption, emission and excitation spectra of CdS nanoparticles embedded in sol-gel silica glasses are reported. Their manufacturing and morphology are described. The effects of temperature on emission behaviour were investigated.