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EN
In order to advance modern information technologies, progress in both the fabrication of magnetic nanostructures and of complex materials, from which small magnetic entities - like the skyrmions present in MnSi - emerge and in developing measurement techniques are desired. Here the sensor-based stray field detection using tailor-made micro-Hall magnetometers has proven to be a versatile tool for studying the magnetization reversal of individual magnetic nanostructures, domain wall motion in thin films, as well as the local stray field close to macroscopic samples. In this article we demonstrate that the local stray field can be used to accurately map out the B-T phase diagram of MnSi and serve as a guidance for simultaneously-performed electronic transport measurements. The presented study also serves as a proof-of-principle experiment for future combined investigations of electronic transport and magnetization focusing on electrically-contacted magnetic nanostructures.
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EN
We report on electronic transport measurements of the magnetic semiconductor Ga_{1-x}Mn_{x}As, whereby the defect landscape in various metallic thin films (x=6%) was tuned by He-ion irradiation. Changes in the distribution of activation energies, which strongly determine the low-frequency 1/f-type resistance noise characteristics, were observed after irradiation and can be explained by deep-level traps residing in the As sublattice. Various other kinds of crystalline defects such as, for instance, Mn interstitials, which possibly form nanoscale magnetic clusters with a fluctuating spin orientation, also contribute to the 1/f noise and can give rise to random telegraph signals, which were observed in films with x=7%. In addition, we neither find evidence for a magnetic polaron percolation nor any features in the noise near the Curie temperature.
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