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Concentration of radiation displacement defects in BSO and BGO crystals irradiated by electrons or neutrons

100%

Potera P.

Open Physics

2008

tom 6

nr 1

52-56

This work is devoted to the calculation of the concentration of radiation displacement defects (RDD) in bismuth germanate and bismuth silicate crystals as a function of particle energy (electrons and neutrons). Energy dependencies of RDD concentrations are discussed in comparison with results for other complex oxide crystals. The obtained results show that for the case of electron irradiation the radiation hardness of BSO and BGO should be similar to other oxide crystals, but for neutrons is drastically smaller. Additionally, for the neutron irradiation, the efficiency of the production of defects in the oxide sublattice is drastically smaller than for other oxide crystals.

Symmetry of the pentacene molecule and classification of electron states studied in the frame of group action on a set

51%

Potera P. , Stefaniuk I. , Kuźma M.

Open Physics

2007

tom 5

nr 2

165-176

Pentacene have recently become the subject of intense studies due to their physical properties which follow from the states of their outer-shell electrons that are able to take part in molecule bonding. The symmetry of these molecules provides the classification of quantum states according to the group theory method. In this paper, we apply a molecular state-space factorization scheme for the classification of pentacene molecules based on the structure of their electron states.

Optical absorption and reflectivity spectra of highly chromium doped CdTe alloy and layer

45%

Potera P. , Stefaniuk I. , Kuzma M. , Virt I. , Pukowska B.

Open Physics

2009

tom 7

nr 2

299-303

In the present work, a CdTe alloy doped with a relatively high concentration of chromium (1%), and a CdTe:Cr layer, have been studied. Absorption and reflectivity spectra were measured at room temperature. They indicate the presence of chromium in the divalent state, both in the alloy and in the layer.

Structural and optical properties of layers of pentacene formed by PLD method

38%

Potera P. , Sagan P. , Virt I. , Kuzma M. , Wisz G. , Rudyj I. , Frugynski M.

Open Physics

2008

tom 6

nr 4

765-770

Organic films fabrication offers the possibility of producing electronic devices of low weight, mechanical flexibility and low cost. One suitable material for organic film fabrigation which is the subject of the great interest is pentacene, because it is characterized by the large carrier mobility (∼1 cm2/Vs). In this work, the growth of pentacene layers using pulse laser deposition (PLD) on different substrates (glass/ITO, Si) is described and various processing parameters are investigated. Two pulsed YAG:Nd3+ laser wavelengths were used for the ablation of the PLD target: the first harmonic at 1064 nm aGn:dNdth3+e second at 532 nm. The structure of the layers formed was examined using SEM and RHEED methods. The results were compared with results of optical spectroscopy studies. It will be shown that layers deposed using second harmonics have a higher quality than those for first harmonic. The other PLD parametersalso have a strong influence on the structure quality of layers.