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Content available remote Structure of AlN films deposited by magnetron sputtering method
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EN
AlN films on a Si substrate were synthesized by magnetron sputtering method. A dual magnetron system operating in AC mode was used in the experiment. Processes of synthesis were carried out in the atmosphere of a mixture of Ar/N2. Morphology and phase structure of the AlN films were investigated at different pressures. Structural characterizations were performed by means of SEM and X-ray diffraction methods. Our results show that the use of magnetron sputtering method in a dual magnetron sputtering system is an effective way to produce AlN layers which are characterized by a good adhesion to the silicon substrate. The morphology of the films is strongly dependent on the Ar/N2 gas mixture pressure. An increase of the mixture pressure is accompanied by a columnar growth of the layers. The films obtained at the pressure below 1 Pa are characterized by finer and compacter structure. The AlN films are characterized by a polycrystalline hexagonal (wurtzite) structure in which the crystallographic orientation depends on the gas mixture pressure.
EN
This work reports the results of a study of Mo thin films synthesis by DC Pulsed Magnetron Sputtering method (PMS), operating at pulse main frequency of 100 kHz and modulated by the additional modulation frequency, driving in the range of 5-1000 Hz (modulated Pulse Magnetron Sputtering – mPMS). We have studied the influence of mPMS on plasma chemical reactions and mechanisms of layer growth using optical emission spectroscopy technique. Our experiment showed strong influence of mPMS method, on the morphology (scanning electron microscopy), phase composition (X-ray diffractometry) and electric properties (4-point probes method) of nanocrystalline and amorphous Mo films. From the utilitarian point of view, low value of resistivity – 43,2 μΩcm of synthesized Mo films predestines them as back contacts for thin solar cells CIGS. Our results revealed that additional modulation frequency should be considered as an important factor for optimization of films synthesis by means of PMS-based methods.
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72%
EN
The synthesis of coatings on textiles fibers enables functionalization of their properties e.g.: changing the reaction on IR radiation. In our experiment, a magnetron with a grounded cathode and positively biased anode was used as a source of plasma. A ring anode was positioned at 8 cm distance from the cathode. Samples of glass and cotton textile were placed at the plane of the anode. Ti and TiN coatings were deposited by sputtering of titanium target in Ar or Ar+ N2 atmosphere. SEM studies showed that, using the magnetron system described above, the textile fibers were covered by the 2 μm to 3 μm thick coatings. Unexpectedly, the coatings were deposited at both sides of the samples: the front side was exposed to glow discharge plasma and the backside was completely shaded from the plasma. IR optical investigation exhibited significant change in reflectance and transmittance of the coated textiles. The using of standard magnetron system (grounded anode and cathode at negative potential) resulted in a coating deposition at the textile side exposed to the plasma action only. We believe that the multi-sided deposition of coatings observed during the process run with magnetron with grounded cathode is a result of an ambipolar diffusion mechanism in the anodic potential drop region.
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Content available remote Thin films of ZnO and ZnMnO by atomic layer epitaxy
58%
EN
We discuss properties of thin films of ZnO and ZnMnO grown with atomic layer epitaxy using new, organic zinc and manganese precursors. Several characterization techniques, including X-ray diffraction, atomic force microscopy, scanning electron microscopy, cathodoluminescence, superconducting quantum interfernece device (SQUID) and electron spin resonance, show good topography of the films and their advantageous optical and magnetic properties.
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