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Low-temperature growth of GaSb epilayers on GaAs (001) by molecular beam epitaxy

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Benyahia D. , Kubiszyn Ł. , Michalczewski K. , Kębłowski A. , Martyniuk P. , Piotrowski J. , Rogalski A.

Opto-Electronics Review

2016

tom Vol. 24, No. 1

40--45

Non-intentionally doped GaSb epilayers were grown by molecular beam epitaxy (MBE) on highly mismatched semi-insulating GaAs substrate (001) with 2 offcut towards (110). The effects of substrate temperature and the Sb/Ga flux ratio on the crystalline quality, surface morphology and electrical properties were investigated by Nomarski optical microscopy, X-ray diffraction (XRD) and Hall measurements, respectively. Besides, differential Hall was used to investigate the hole concentration behaviour along the GaSb epilayer. It is found that the crystal quality, electrical properties and surface morphology are markedly dependent on the growth temperature and the group V/III flux ratio. Under the optimized parameters, we demonstrate a low hole concentration at very low growth temperature. Unfortunately, the layers grown at low temperature are characterized by wide FWHM and low Hall mobility.

Heavily Si-doped InAs photoluminescence measurements

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Grodecki K. , Murawski K. , Henig A. , Michalczewski K. , Benyahia D. , Kubiszyn Ł. , Martyniuk P.

Materials Science Poland

2017

tom Vol. 35, No. 3

647--650

In this paper, we present experimental results of photoluminescence for series of InAs:Si heavily doped samples, with doping level varying from 1.6 × 1016 cm−3 to 2.93 × 1018 cm−3. All samples were grown using MBE system equipped with a valved arsenic cracker. The measurements were performed in the temperature range of 20 K to 100 K. Although the Mott transition in InAs appears for electron concentrations above 1014 cm−3, Burstein-Moss broadening of photoluminescence spectra presented in this article was observed only for samples with concentration higher than 2 × 1017 cm−3. For the samples with lower concentrations two peaks were observed, arising from the band gap and defect states. The intensity of the defect peak was found to be decreasing with increasing temperature as well as increasing concentration, up to the point of disappearance when the Burstein-Moss broadening was visible.