Wyniki wyszukiwania - Biblioteka Nauki

Nowa wersja platformy, zawierająca wyłącznie zasoby pełnotekstowe, jest już dostępna.
Przejdź na https://bibliotekanauki.pl

Ograniczanie wyników

2 Materials Science Poland

2 2006

Znaleziono wyników: 2

Liczba wyników na stronie

Wyniki wyszukiwania

Wyszukiwano:
w słowach kluczowych: związki galu

Sortuj według:

Ogranicz wyniki do:

Dependence of GaAs and Si surface energy on the misorientation angle of crystal planes

100%

Zdyb A. , Olchowik J. M. , Mucha M.

Materials Science Poland

2006

tom Vol. 24, No. 4

1109--1114

The paper reports on the dependence of Si and GaAs surface energies on the misorientation angle of Si and GaAs crystal planes in a broad angle range. The energetic balance between GaAs and Si is unfavourable for growth of GaAs on Si substrate. Minima of the surface energy correspond to GaAs/Si heterostructure interface energy minima which indicate preferable crystal orientations for obtaining GaAs layers on Si.

Epitaxial films of GaInPAsSb quinary solid solutions

58%

Kuznetsov V. V. , Rubtsov E. R. , Kognovitskaya E. A.

Materials Science Poland

2006

tom Vol. 24, No. 4

1057--1066

The method of the obtaining quinary solid solutions on the basis of A IIIBV compounds (GalnPAsSb) with specified properties was developed. New GaInPAsSb/GaSb, GalnPAsSb/InAs heterostructures were obtained to create optoelectronic devices for the 2-5 urn spectral range. The broken-gap type II hetero junction was formed at the InAs/Ga0.92In 0.08P0.05As0.08Sb0.87 heterostructure, and a light-emitting diode was fabricated with the emission intensity maximum at 1.9 žm.