Wyniki wyszukiwania - Biblioteka Nauki

Nowa wersja platformy, zawierająca wyłącznie zasoby pełnotekstowe, jest już dostępna.
Przejdź na https://bibliotekanauki.pl

Ograniczanie wyników

3 Materials Science Poland

Znaleziono wyników: 3

Liczba wyników na stronie

Wyniki wyszukiwania

Wyszukiwano:
w słowach kluczowych: transparent conducting oxide

Sortuj według:

Ogranicz wyniki do:

Effect of working pressure on the structural, optical and electrical properties of titanium-gallium co-doped zinc oxide thin films

100%

Zhang T. , Zhong Z.

tom Vol. 31, No. 3

454--461

The transparent conducting titanium-gallium co-doped zinc oxide (TGZO) thin films were grown on glass substrates by radio-frequency magnetron sputtering technique. The effects of working pressure on the structural, optical and electrical properties of the films were investigated. The results show that the deposited films are polycrystalline with a hexagonal wurtzite structure and highly textured along the c-axis perpendicular to the substrate. The TGZO film prepared at the working pressure of 0.4 Pa exhibits the best crystallinity, the maximal grain size, the highest transmittance, the lowest resistivity and the highest figure of merit. The optical constants of the films were calculated using the method of optical spectrum fitting. The dispersion behavior of the films was studied by the single-electronic oscillator dispersion model. The oscillator parameters and optical bandgaps were determined. The results demonstrate that the microstructure and optoelectrical properties of the TGZO films are dependent on the working pressure.

Development of highly transparent and conducting yttrium-doped ZnO films: the role of sol-gel stabilizers

100%

Kaur R. , Singh A. V. , Mehra R. M.

tom Vol. 22, No. 3

201--209

Yttrium-doped zinc oxide (YZO) thin films were deposited with the dip coating technique. The effect of different sol-gel stabilizers (lactic acid with hydrolysis, without hydrolysis, and diethanolamine (DEA)) on structural, electrical and optical properties of the produced films were investigated. The stability of solutions prepared with DEA was much higher than that of other stabilizers. Films deposited using this solution also exhibited good adherence to the substrate, preferential orientation, and the lowest full width at half maximum of (002) X-ray diffraction peak. Average transmittance in the visible region increased by 14.6% and resistivity decreased by two orders of magnitude as the stabilizer was changed from lactic acid to DEA. The lowest resistivity, 3.5 ?10-2 źcm, and an average transmittance of 85% are obtained for 200 nm thick films annealed at 450 C in air using DEA as a stabilizer.

Annealing effect on the structural and optoelectronic properties of Cu-Cr-O thin films deposited by reactive magnetron sputtering using a single CuCr target

100%

Tsai D.-C. , Chen E.-C. , Huang Y.-L. , Shieu F.-S. , Chang Z.-C.

tom Vol. 41, No. 1

191--201

The aim of this study is to explore the structural and optoelectronic properties of Cu-Cr-O thin films when processed by the magnetron sputtering method using a single equimolar CuCr alloy target. These films were then post-annealed in a controlled Ar atmosphere at 500°C to 800°C for 2 h. The as-deposited Cu-Cr-O thin film consisted of an amorphous phase and exhibited extremely poor optoelectronic properties. After annealing was conducted at 500°C, monoclinic CuO and spinel CuCr2O4 phases were simultaneously formed in the film. Upon increasing the annealing temperature to 600°C, the CuCr2O4 phase reacted completely with the CuO phase and transformed into the delafossite CuCrO2 phase, possessing optimal optoelectronic performance. It has an electrical resistivity of 41 Ω-cm and a light transmittance of 49.5%, making it suitable for p-type transparent conducting electrodes. A further increase in annealing temperature resulted in larger grains and greater surface roughness and void density, which, in turn, degraded the optoelectronic performance.