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Thin-film-silicon solar cells

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Carabe J. , Gandia J.

tom Vol. 12, No. 1

1--6

The traditional development of photovoltaics has been based on crystalline-silicon wafer technology. In the early 1970’s, however, a new approach arises based on the possibility to grow silicon in the form of a thin film onto a given substrate. Several techniques are used for such a deposition, among which plasma-enhanced chemical vapour deposition (PECVD) is clearly outstanding given its widespread use and success. More recently, very-high-frequency (VHP PECVD) and hot-wire CVD have appeared as very promising and fast developing alternatives with important potential and actual advantages. Thin-film technology introduces completely novel concepts and challenges in silicon photovoltaics. Low-temperature processes particularly adequate for large-area devices open up not only very important cost-reduction potential, but also new possibilities such as making semi-transparent or flexible modules. Additional important features are a highly automated production system, an enormous potential for building integration, a good performance at realistic working temperatures (around 40 C) and an excellent durability in outdoor conditions among others. Photovoltaics are facing important challenges for the near future. Silicon-wafer technology is evolving towards making thinner, cheaper, multicrystalline silicon. Thin-film-silicon researchers are in turn striving to make thicker, better, more crystalline films. Both ways seem to converge to new-generation photovoltaics in which wafer and thin-film technologies may be used in a synergistic rather than competing manner. Silicon heterojunction cells (made up of a crystalline silicon absorber onto which one or more thin-film silicon layers are deposited), such as the well-known HIT cell, are in the forefront of photovoltaics and may represent a breakthrough in the next few years.

Fabrication of thin film polycrystalline CIS photovoltaic heterostructure

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Pisarkiewicz T. , Jankowski H. , Schabowska-Osiowska E. , Maksymowicz L. J.

2003

tom Vol. 11, No. 4

297--304

Manufacturing processes and investigation of properties of thin film materials forming the CulnSe2 (CIS) solar cell have been described. The cell consisted of the following layers: glassl Mol p-CulnSe2/n-CdS/n⁺-ZnO/. CIS absorbers were obtained by pulse magnetron sputtering of metallic targets in argon yielding the multilayer precursors structures which were successively chalcogenised in selenium vapours. Cadmium sulfide buffer layer was manufactured by chemical bath deposition (CBD) method which offers the films with optimal properties. Window zinc oxide layers were obtained by RF magnetron sputtering of metallic Zn:Al target in oxygen reactive atmosphere. Thin film CIS solar cells with the efficiencies of the order of 6% have been produced. Further improvement in technology leading to CIS cells with better parameters have been discussed.