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2 Opto-Electronics Review

2 2000

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Application of stain etched porous silicon in c-Si solar cells

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Dimova-Malinovska D.

Opto-Electronics Review

2000

tom Vol. 8, No. 4

353-355

In this work application of porous silicon (PS) to c-Si solar cells is presented. The PS layer is formed between the fingers of the Al grid contact by the method of stain etching. The short circuit current, Isc, of the solar cells with PS between the grid contacts increases of 30-40% comparing with the solar cell without PS. The open circuit voltage decreases a little probably due to decreasing doping concentration of P in n+ - diffused layer, after stain etching, when 80 nm of it is converted to PS. The value of a fill factor does not change significantly. The spectral dependence of Isc demonstrates that it increases in the whole spectral region. This could be related to a decrease in reflectivity and partially to an increase in transparency of the emitter after PS formation.Tthe efficiency of solar cells increases of about 25-30%.

Influence of porous silicon on parameters of silicon solar cells

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Lipiński M. , Panek P. , Bielańska E. , Węgłowska J. , Czternastek H.

Opto-Electronics Review

2000

tom Vol. 8, No. 4

418-420

The silicon solar cells with PS /n+/ p-Si structure (PS - porous Si) have been realised. Porous silicon obtained by stain etching or by electrochemical etching on standard alkaline textured surface has reduced effective reflectance coefficient to about 3% in a wavelength range of 400-1000 nm. Improved performance of solar cells due to formation of PS layer on the top surface between grid fingers has been demonstrated. Increases in efficiency of more than 25% have been achieved. In one chemical process antireflection coating as well as the selective emitter could be simultaneously obtained.