We study theoretically spin-polarized transport in double barrier tunneling junctions based on a single level quantum dot interacting with a local phonon mode. It is shown that the electron-phonon interaction gives rise to oscillations of the tunnel magnetoresistance (TMR). In asymmetrical junctions, the polaronic transport through the junction may lead to a significant suppression of the diode-like behavior. The case of negative effective charging energy is also analyzed numerically. It is shown in particular that for a mesoscopic diode an interplay between the single -electron cotunneling and the pair tunneling processes leads to inversion of TMR.
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