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Electrical and optical properties of sol-gel derive ZnO: Al thin films

100%

Sagar P. , Kumar M. , Mehra R. M.

tom Vol. 23, No. 3

685--696

High quality sol-gel derived ZnO and ZnO: Al thin films were deposited on corning 7059 glass substrate by spin coating technique. The annealed films showed c-axis preferred orientation. The structural electrical and optical properties of the films were investigated as a function of Al concentration from 0 to 3.0 at%. A maximum conductivity of 18.86. omega-1*cm-1 with carrier concentration of 2.2 x 1024 m-3 was found for Al concentration of 0.8 at%. The conductivity is found to be activated type above 375 K and variable range hopping conduction is observed below room temperature. Various transport parameters such as average spacing between donors, effective Bohr radius, donor levels, Debye screening length and average grain size have been estimated. The increase in band gap with Al doping is explained in terms of Burstein Moss shift.

Influence of calcination temperature on optical and structural properties of TiO2 thin films prepared by means of sol-gel and spin coating

63%

Tański T. , Matysiak W. , Kosmalska D. , Lubos A.

nr 2

Influence of solvent on the surface morphology and optoelectronic properties of a spin coated polymer thin films

63%

Weszka J. , Szindler M. M. , Szczęsna M. , Szindler M.

2013

tom Vol. 61, nr 2

302—307

Purpose: The aim of this paper was to investigate changes in surface morphology and optoelectronic properties of MEH-PPV thin films. Thin films were prepared using spin coating method. Design/methodology/approach: The changes in surface topography was observed by the atomic force microscope AFM. The results of thin films roughness have been prepared in the software XEI. The UV/VIS spectrometer was used to investigate absorbance of the obtained thin films. Findings: Results and their analysis allow to conclude that the solvent, which is an important factor in spin coating technology has an influence on surface morphology and optoelectronic properties of MEH-PPV thin films. Practical implications: Known MEH-PPV optoeletronic properties and the possibility of obtaining a uniform thin film show that it can be a good material for optoelectronic and photovoltaic application. Originality/value: The paper presents some researches of MEH-PPV thin films deposited by spin coating method deposition on glass BK7. A MEH-PPV solution was prepared using three different solvents: chlorobenzene, chloroform and pyridine.

Studying of spin-coated oxad-Si properties

51%

Weszka J. , Dobrzański L. A. , Jarka P. , Jurusik J. , Hajduk B. , Bruma M. , Konieczny J. , Mańskowski D.

2009

tom Vol. 37, nr 2

505-511

Purpose: The major aim of this paper was describing technical conditions of polymer thin film deposition by spin-coating techniques. Design/methodology/approach: Thin films of about nanometres thickness were prepared by spin-coating and their properties were studied. As a material for preparing polymer thin films oxad-Si was used. The thin films were deposited with various spinning velocity from solution of different concentration. Thin films were deposited on BK7 glass and quartz substrates. Findings: The obtained results describe influence of the solution concentration and spinning velocity on morphology and optical properties of spin-coated oxad-Si thin films. Research limitations/implications: The obtained results confirm the oxad-Si availability for optoelectronic application to be stipulated. Practical implications: The morphology and optical properties of Oxad-Si polymer thin films were described. This paper include also description of the influence of deposition conditions on properties of polymer thin films. Originality/value: The value of this paper is defining the optimal parameters of spin-coating technology for preparing oxad-Si thin film with the best properties for optoelectronics appliances. This paper describes new experimental polymeric material for spin coating technology. Results of these researches enable to develop the spin-coating technology.