Wyniki wyszukiwania - Biblioteka Nauki

Nowa wersja platformy, zawierająca wyłącznie zasoby pełnotekstowe, jest już dostępna.
Przejdź na https://bibliotekanauki.pl

Ograniczanie wyników

Znaleziono wyników: 2

Liczba wyników na stronie

Wyniki wyszukiwania

Wyszukiwano:
w słowach kluczowych: semiconducting III-V materials

Sortuj według:

Ogranicz wyniki do:

Multi-step interrupted-growth MBE technology for GaAs/AlGaAs (~9.4 µm) room temperature operating quantum-cascade lasers

100%

Kosiel K. , Kubacka-Traczyk J. , Sankowska I. , Szerling A. , Gutowski P. , Bugajski M.

2012

tom Vol. 20, No. 3

239-246

In order to adjust the highly controllable and optimum growth conditions, the multi-step interrupted-growth MBE processes were performed to deposit a series of GaAs/Al₀.₄₅Ga₀.₅₅As QCL structures. The additional calibrations of MBE system were carried out during the designed growth interruptions. This solution was combined with a relatively low growth rate of active region layers, in order to suppress the negative effects of elemental flux instabilities. As a result, the fabricated QCL structures have yielded devices operating with peak optical power of ~12 mW at room temperature. That is a better result than was obtained for comparable structures deposited with a growth rate kept constant, and with the only initial calibrations performed just before the epitaxy of the overall structure.

Epitaxial films of GaInPAsSb quinary solid solutions

51%

Kuznetsov V. V. , Rubtsov E. R. , Kognovitskaya E. A.

Materials Science Poland

2006

tom Vol. 24, No. 4

1057--1066

The method of the obtaining quinary solid solutions on the basis of A IIIBV compounds (GalnPAsSb) with specified properties was developed. New GaInPAsSb/GaSb, GalnPAsSb/InAs heterostructures were obtained to create optoelectronic devices for the 2-5 urn spectral range. The broken-gap type II hetero junction was formed at the InAs/Ga0.92In 0.08P0.05As0.08Sb0.87 heterostructure, and a light-emitting diode was fabricated with the emission intensity maximum at 1.9 žm.