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Novel InTlSb alloy for uncooled long : wavelength infrared photodetectors

100%

Lee J. J. , Kim J. D. , Razeghi M.

1999

tom Vol. 7, No. 1

19-28

In this paper, we report on the growth and characterization of novel InTlSb alloys for uncooled long-wavelength infrared photodetector applications. The InTlSb epilayers were grown on InSb and GaAs substrates by low-pressure metalorganic chemical vapor deposition. The incorporation of Tl into InSb was investigated in detail with Auger electron spectroscopy, high-resolution x-ray diffraction, transmission, absorption, photoresponse measurements, and Hall effect measurements. We also demonstrate the photodetectors fabricated from the grown InTlSb alloys. Photoresponse of InTlSb photodetectors is observed up to 11 µm at room temperature. The maximum responsivity of an In₀.₉₆Tl₀.₀₄Sb photodetector is about 6,64 V/W at 77 K, corresponding to a Johnson noise limited detectivity of 7,64 x 10⁸ cm Hz¹/² W⁻¹. The carrier lifetime in InTlSb photodetectors derived from the stationary photoconductivity is 10-50 ns at 77 K. The present results showed the feasibility of using InTlSb alloys for the uncooled infrared photodetector applications.

AlxGa₁-xN based UV visible-blind photodetector device applications

88%

Omnes F. , Monroy E. , Calle F. , Munoz E. , Beaumont B. , Gibart P.

tom Vol. 8, No. 1

43-55

AlxGa₁-xN material system whose bandgap lies in the 3.42-6.2 eV range is extremely interesting for visible and solar blind UV photodetector applications. This paper describes the device performances of AlxGa₁-xN (x = 0 - 35%) UV photoconductors and Schottky barrier photodetectors for visible-blind applications grown on c-oriented sapphire, with a detailed balance with the basic materials properties. Conventional low-temperature grown AlN or GaN were used for all applications. High quality Schottky barrier photodiodes made of epitaxial lateral overgrown (ELOG) GaN are also presented. All Schottky barrier devices show a fast time response (15 ns for Al₀.₀₂₂Ga₀.₇₈N(Si) photodiodes grown on AlN nucleation layers), a high UV-visible rejection factor (> 3 orders of magnitude for AlGaN(Si) photodiodes grown on GaN or AlN nucleation layers, and rising up to 4 orders of magnitude for the GaN ELOG material), and high absolute values of above bandgap reponsivities (up to 130 mA/W for GaN ELOG materials). New application of AlGaN UV Schottky barrier photodetectors to monitor the biological action of the solar UV radiations as well as the device performance of high quality GaN and AlGaN metal semiconductor metal with cutoff wavelengths as short as 310 nm, are described in detail.