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Customized genetic algorithm for facility allocation using p-median

100%

Silva S. D. d. S. , Costa M. G. F. , Costa Filho C. F. F.

2019

tom Vol. 18

165--169

The p-median problem is classified as a NP-hard problem, which demands a long time for solution. To increase the use of the method in public management, commercial, military and industrial applications, several heuristic methods has been proposed in literature. In this work, we propose a customized Genetic Algorithm for solving the p-median problem, and we present its evaluation using benchmark problems of OR-library. The customized method combines parameters used in previous studies and introduces the evolution of solutions in stationary mode for solving PMP problems. The proposed Genetic Algorithm found the optimum solution in 37 of 40 instances of p-median problem. The mean deviation from the optimal solution was 0.002% and the mean processing time using CPU core i7 was 17.7s.

Strain state in silicon structures for microprocessor technology

84%

Hecker M. , Geisler H.

Materials Science Poland

2007

tom Vol. 25, No. 1

7--18

A promising approach to improve the performance of present CMOS devices is to introduce mechanical strain into the channel regions below the transistor gates. Strain can be generated as global strain on the whole wafer level (e.g., by growing strained silicon films on strain-relaxed silicon-germanium (SiGe) alloy layers or by using strained silicon films on an insulator), or as local strain on the transistor scale by applying specific technology processes (e.g., making use of embedded SiGe source-drain regions). The detection of strain in very thin silicon films requires sophisticated techniques with high depth sensitivity, whereas the measurement of the local strain state in thin Si structures with small lateral dimensions below 50 nm - such as the channels of current CMOS transistors - still remains to be mastered. A technique possessing the potential for solving this problem is Raman spectroscopy, where the diffraction limit for lateral resolution can be bypassed by near-field approaches. In the present paper, the occurrence of large strains in SiGe films and corresponding stresses in the GPa range are demonstrated by Raman spectroscopy, utilizing a simple approach for determining strain and composition separately. To estimate the strain distribution in a silicon channel structure due to embedded SiGe source-drain regions, a silicon strain calculation is applied based on a continuum-mechanical model utilizing a continuous distribution of virtual dislocations along the Si-SiGe boundaries. Within the framework of this model, the stress state in a 2D approximation is obtained by analytical expressions. Thus, the spatial distribution of channel strain and the impact of geometry on the strain state are obtained in a straightforward way.