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A novel trapezoidal profile of optimized diffraction grating for light trapping in thin silicon solar cells

100%

Dehdast M. , Bahrami A. , Mohammadnejad S.

2017

tom Vol. 47, nr 1

75--83

In this paper, we propose a new design and comprehensive optimization process for improving the diffraction gratings used as the back reflector of silicon solar cells. For this process, the optimum refractive index and its corresponding available material which can be used as the grating material has been chosen as 1.57 and SiO2, respectively. Also, all of geometric parameters which affect the performance of the grating, such as periodicity, height and depth of grating profiles have been studied and the appropriate values for each of them have been proposed. In order to optimize the profile of grating, a transition from triangular to rectangular structure has been considered and finally a specific trapezoidal profile has been chosen as the optimized grating back reflector which enhances the cell efficiency up to 6%. Simulation results show that the different grating profiles have the same duty cycle and therefore use the same amounts of materials.

Electrical and optical properties of nanowires based solar cell with radial p-n junction

88%

Pylypova O. V. , Evtukh A. A. , Parfenyuk P. V. , Ivanov I. I. , Korobchuk I. M. , Havryliuk O. O. , Semchuk O. Y.

tom Vol. 27, No. 2

143--148

In our studies the absorption, transmittance and reflectance spectra for periodic nanostructures with different parameters were calculated by the FDTD (Finite-Difference Time-Domain) method. It is shown that the proportion of reflected light in periodic structures is smaller than in case of thin films. The experimental results showed the light reflectance in the spectral range of 400–900 nm lower than 1% and it was significantly lower in comparison with surface texturing by pyramids or porous silicon. Silicon nanowires on p-type Si substrate were formed by the Metal-Assisted Chemical Etching method (MacEtch). At solar cells with radial p-n junction formation the thermal diffusion of phosphorus has been used at 790°C. Such low temperature ensures the formation of an ultra-shallow p-n junction. Investigation of the photoelectrical properties of solar cells was carried out under light illumination with an intensity of 100mW/cm2. The obtained parameters of NWs' solar cell were Isc = 22 mA/cm2, Uoc = 0.62 V, FF = 0.51 for an overall efficiency η = 7%. The relatively low efficiency of obtained SiNWs solar cells is attributed to the excessive surface recombination at high surface areas of SiNWs and high series resistance.

Optical properties of porous Si/PECVD SiNx:H reflector on single crystalline Si for solar cells

88%

Remache L. , Nychyporuk T. , Guermit N. , Fourmond E. , Mahdjoub A. , Lemiti M.

tom Vol. 34, No. 1

94--100

The improvement of optical confinement on the back crystalline silicon solar cell is one of the factors leading to its better performance. Porous silicon (PS) layer can be used as a back reflector (BR) in solar cells. In this work, single layers of porous silicon were grown by electrodeposition on a single crystalline silicon substrate. The measurement of the total reflectivity (RT) on Si/PS surface showed a significant improvement in optical confinement compared to that measured on Si/standard Al back surface field (BSF). The internal reflectivity (RB) extracted from total reflectivity measurements achieved 86 % for the optimized single PS layer (92 nm thick layer with 60 % porosity) in the wavelength range between 950 and 1200 nm. This improvement was estimated as more than 17 % compared to that measured on the surface of Si/BSF Al contact. To improve the stability and passivation properties of PS layer BR, silicon nitride layer (SiNx) was deposited by PECVD on a PS layer. The maximum measured total reflectivity for PS/SiNx achieved approximately 56 % corresponding to an improved RB of up to 83 %. The PS formation process in combination with the PECVD SiNx, can be applied in the photovoltaic cell technology and offer a promising technique to produce high-efficiency and low-cost c-Si solar cells.