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Photovoltage formation across Si p-n junction exposed to laser radiation

100%

Ašmontas S. , Gradauskas J. , Sužiedėlis A. , Šilėnas A. , Širmulis E. , Švedas V. , Vaičikauskas V. , Vaičiūnas V. , Žalys O. , Kostylyov V.

tom Vol. 36, No. 2

337--340

Photovoltage formation across Si p-n junction exposed to laser radiation is experimentally investigated. Illumination of the junction with 1.06 μm wavelength laser radiation leads to formation of classical photovoltage Uph due to intense electronhole pair generation. When the photon energy is lower than the semiconductor forbidden energy gap, the photovoltage U is found to consist of two components, U = Uf + Uph. The first Uf is a fast one having polarity of thermoelectromotive force of hot carriers. The second Uph is classical photovoltage with polarity opposite to Uf. It is found that Uf is linearly dependent on laser intensity. The classical photovoltage is established to decrease with the rise of radiation wavelength due to decrease in two-photon absorption coefficient with wavelength. Predominance of each separate component in the formation of the net photovoltage depends on both laser wavelength and intensity.

Microwave-enhanced exciton delocalisation in low-dimensional CdTe/CdMnTe and CdMnTe/CdMgTe quantum well structures

58%

Godlewski M. , Ivanov V. Y. , Khachapuridze A.

tom Vol. 48, No. 4

346-354

In this work we descrjbe new application of the technique of optically detected cyclotron resonance (ODCR) to the studies of localisation processes in quantum well structures of CdTe/CdMnTe and CdMnTe/CdMgrre. Interaction between rnicrowave-eated free carriers, at cyclotron. resonance conditions, and either site- or impurity-localised excitons results in modificatjon of photoluminescence from the sample. In consequence, cyclotron resonance of free carriers can be detected optically. We show here that the tech-nique of ODCR allows us to monitor processes of carrier/exciton localisation and also to evaluate their influence on radiative recombination processes in quantum well structures. We conclude that localisation effects are crucial to explain operation of CdTe/CdMnTe and CdMnTe/CdMgTe structures as light modulators.