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2 Materials Science Poland

2 2006

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Torque due to spin-polarized current in ferromagnetic single-electron transistors

100%

Kowalik M. , Wiśniewska J. , Barnaś J.

Materials Science Poland

2006

tom Vol. 24, No. 3

815--820

Theoretical analysis of the current-induced torque acting on magnetic moment of the central part (island) of a ferromagnetic single-electron transistor has been carried out in the regime of sequential tunneling. The island is assumed to be ferromagnetic and attached to two leads (electrodes). One of the leads is ferromagnetic, and the corresponding magnetic moment is oriented arbitrarily. The torque is calculated from the spin current absorbed by the magnetic moment of the island, and the calculations are carried out in the limit of fast spin relaxation on the island (no spin accumulation).

Transport characteristics of ferromagnetic single-electron transistors with non-collinear magnetizations

86%

Wiśniewska J. , Kowalik M. , Barnaś J.

Materials Science Poland

2006

tom Vol. 24, No. 3

761--767

Theoretical analysis of spin-polarized transport through a ferromagnetic single-electron transistor (FM SET) has been carried out in the sequential tunneling regime. Two external electrodes and the central part (island) of the device are assumed to be ferromagnetic, with the corresponding magnetizations being generally non-collinear. Transport properties of the FM SET are analyzed within the master equation approach, with the respective transition rates determined from the Fermi golden rule. It is assumed that spin relaxation processes on the island are sufficiently fast to neglect spin accumulation. It is shown that electric current and tunnel magnetoresistance (TMR) strongly depend on magnetic configuration of the device. Transport characteristics of symmetrical and asymmetrical structures have been calculated as a function of bias and the gate voltages.