Presents results obtained by the application of the method of thermally stimulated depolarization (TSD) to investigate dipole relaxation in SiO/sub 2/ xerogels. The presence of a strong temperature gradient in the sample has been revealed during measurements of the TSD current. The paper describes the method of determination of activation energy W, initial polarization P/sub 0/ and factor tau /sub 0/, for the dipole relaxation processes under investigation. It has been shown that the modified TSD method is a sensitive tool for the investigation of changes taking place in the peripheral molecular layer on the surface of pores in SiO/sub 2/ xerogels.
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