Hafnium dioxide thin films were deposited on fused silica substrates by reactive electron beam evaporation at three different substrate temperatures. After deposition, hafnium dioxide thin films were annealed in the ambient atmosphere for two hours at 500 °C and 1000 °C, respectively. X-ray diffractometry was used to study physical characterizations of as-deposited and annealed hafnium dioxide. The experimental results showed that hafnium dioxide fabricated at various substrate temperatures had different crystallite orientations after annealing at 500 °C or 1000 °C. These facts suggest that substrate temperature influences not only the crystallization state of as-deposited hafnium dioxide but also crystallite re-orientation after annealing.
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