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1 Bulletin of the Polish Academy of Sciences. Technical Sciences

1 2008

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Conductive atomic force microscope for investigation of thin-film gate insulators

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Wielgoszewski G. , Gotszlak T. , Woszczyna M. , Zawierucha P. , Zschech E.

2008

tom Vol. 56, nr 1

39-44

In modern microelectronics progress has been made towards low power ultra large-scale integration (ULSI), and nano-structure devices such as single electron transistors and quantum dots. In this technology application of new materials, which includes high-k dielectrics for the MOSFET transistors, with extraordinary purity and uniformity is required. Failure analysis and reliability investigations of such films very often requires high-resolution local measurements of electrical surface parameters. This kind of experiments can be performed using conductive atomic force microscopy, which provides simultaneous measurement of surface topography and current flowing through the investigated layer. In order to acquire reliable data, there was designed a precise measurement and control system, which included a low-noise current-to-voltage converter of picoampere resolution, a scanning stage with control electronics and a data acquisition system. In the paper we describe the architecture of the de-signed and applied experimental set-up. We also present results of simultaneous measurements of topography and current on gold and highly oriented pyrolytic graphite (HOPG).

Conductive atomic force microscope for investigation of thin-film gate insulators

100%

Wielgoszewski G. , Gotszalk T. , Woszczyna M. , Zawierucha P. , Zschech E.