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Effects of Al doping on defect behaviors of ZnO thin film as a photocatalyst

100%

Yu F. , Hu H. , Wang B. , Li H. , Song T. , Xu B. , He L. , Wang S. , Duan H.

2019

tom Vol. 37, No. 3

437--445

Al doped ZnO (AZO) thin films were prepared on silica substrates by sol-gel method. The films showed a hexagonal wurtzite structure with a preferred orientation along c-axis. Suitable Al doping dramatically improved the crystal quality compared to the undoped ZnO films. Dependent on the Al dopant concentration, the diffraction peak of (0 0 2) plane in XRD spectra showed at first right-shifting and then left-shifting, which was attributed to the change in defect concentration induced by the Al dopant. Photocatalytic properties of the AZO film were characterized by degradation of methyl orange (MO) under simulated solar light. The transmittance of the films was enhanced by the Al doping, and the maximum transmittance of 80 % in the visible region was observed in the sample with Al concentration of 1.5 at.% (mole fraction). The film with 1.5 at.% Al doping achieved also maximum photocatalytic activity of 68.6 % under solar light. The changes in the film parameters can be attributed to the variation in defect concentration induced by different Al doping content.

The influence of the prefiring temperature on the structure and surface morphology of sol-gel derived ZnO film

100%

Hwang K. S. , Hwangbo S. , Kim J. T.

tom Vol. 27, No. 1

159--170

Show aC-axis oriented ZnO thin films were prepared on silica glass substrates by the sol-gel method using a zinc naphthenate precursor. As-deposited films were prefired at 250 °C for 60 min, at 350 °C for 30 min, and at 500 °C for 10 min, followed by final annealing at 600-900 °C in air. Crystal structure, surface morphology, surface roughness and transmittance at the visible range were analyzed by high resolution X-ray diffraction, field emission scanning electron microscopy, scanning probe microscopy, and ultraviolet spectrophotometry. (002)-oriented ZnO films were obtained by annealing at 600 °C, and at higher temperatures for the films prefired at 350 °C and 500 °C. All the films exhibited a high transmittance, above 80%, in the visible region, and showed a sharp fundamental absorption edge at 0.38-0.40 žm. The most highly c-axis oriented ZnO with a homogeneous surface was observed at a prefiring temperature of 350 °C.