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Gas-sensing properties and in-situ diffuse-reflectance Fourier-transform infrared spectroscopy study of diethyl ether adsorption and reactions on SnO2 film

100%

Wang N. , Huang K. , Song J.

Materials Science Poland

2017

tom Vol. 35, No. 2

265--274

Diethyl ether is a common industrial reagent and medical anesthetic. It is necessary to carry out real-time monitoring of this molecule due to its harmful effects on human health. In this paper, a highly sensitive diethyl ether SnO2 gas-sensing material has been prepared by a sol-gel method. The gas sensitivity was tested by a home-made gas-sensing equipment. The surface adsorption and reaction processes between the SnO2 gas-sensing film and the diethyl ether have been studied by in situ diffuse-reflectance Fourier-transform infrared spectroscopy (DRFT-IR) at different temperatures. The results show that the SnO2 gas-sensing material has high sensitivity to diethyl ether, and the lowest detection limit can reach 1 ppm. Furthermore, ethyl (CH3CH2•), oxoethyl (CH3CH2O•), ethanol (CH3CH2OH), formaldehyde (HCHO), acetaldehyde (CH3CHO), ethylene (C2H4), H2O and CO2 surface species are formed during diethyl ether adsorption at different temperatures. A possible mechanism of the reaction process is discussed.

Hydrogen and LPG sensing properties of SnO2 films obtained by direct oxidation of SILAR deposited SnS

88%

Mitra P. , Mondal S.

Bulletin of the Polish Academy of Sciences. Technical Sciences

2008

tom Vol. 56, nr 3

294-312

Hydrogen (H2) and liquid petroleum gas (LPG) sensing properties of SnO2 thin films obtained by direct oxidation of chemically deposited SnS films has been studied. The SnS film was prepared by a chemical technique called SILAR (Successive Ionic Layer Adsorption and Reaction). The sensor element comprises of a layer of chemically deposited SnO2 film with an overlayer of palladium (Pd) sensitiser. The Pd sensitiser layer was also formed following a chemical technique. The double layer element so formed shows significantly high sensitivity to H2 and LPG. The temperature variation of sensitivity was studied and the maximum sensitivity of 99.7% was observed at around 200°C for 1 vol% H2 in air. The response time to target gas was about 10 seconds and the sensor element was found to'recover to its original resistance reasonably fast. The maximum sensitivity of 98% for 1.6 vol% LPG was observed at around 325°C. The sensor response and recovery was reasonably fast (less than one minute) at this temperature.

Hydrogen and LPG sensing properties of SnO2 films obtained by direct oxidation of SILAR deposited SnS

44%

Mitra P. , Mondal S.