A laboratory scale plasma enhanced chemical vapor deposition (PE-CVD) process was developed for obtaining thin films from tetramethoxysilane (TMOS) in mixtures with He and O2 on silicon single crystals using electric discharges, stabilized with a dielectric barrier under atmospheric pressure. The films deposited were of a good adhesion to the substrate and smooth. The rate of films deposition was measured and their composition was determined by infrared spectroscopy with Fourier transformation (FTIR) and X-ray photoelectron spectroscopy (XPS). The topography of the films was determined using atomic force microscope (AFM).
JavaScript jest wyłączony w Twojej przeglądarce internetowej. Włącz go, a następnie odśwież stronę, aby móc w pełni z niej korzystać.