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Deep levels in GaN studied by deep level transient spectroscopy and Laplace transform deep-level spectroscopy

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Kamyczek P. , Placzek-Popko E. , Zielony E. , Zytkiewicz Z.

tom Vol. 31, No. 4

572--576

In this study we present the results of investigations on Schottky Au–GaN diodes by means of conventional DLTS and Laplace DLTS methods within the temperature range of 77 – 350 K. Si-doped GaN layers were grown by Molecular Beam Epitaxy technique (MBE) on sapphire substrates. DLTS signal spectra revealed the presence of four majority traps: two hightemperature and two low-temperature peaks. Using LDLTS method and Arrhenius plots the activation energy and capture cross sections were obtained. For two high-temperature majority traps they are equal to E1 = 0.65 eV, s1 = 8.2 × 10<-16/sup>cm2 and E2 = 0.58 eV, s2 = 2.6 × 10<-15/sup> cm2 whereas for the two low-temperature majority traps E3 = 0.18 eV, s3 = 9.72 × 10<-18/sup> cm2 and E4 = 0.13 eV, s4 = 9.17 × 10<-18/sup> cm2. It was also found that the traps are related to point defects. Possible origin of the traps was discussed and the results were compared with the data found elsewhere [1–5].

Characterization of deep-level defects in GaNAs/GaAs heterostructures grown by APMOVPE

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Gelczuk Ł. , Dąbrowska-Szata M. , Ściana B. , Pucicki D. , Radziewicz D. , Kopalko K. , Tłaczała M.

Materials Science Poland

2016

tom Vol. 34, No. 4

726--734

Conventional deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS techniques were used to study electrical properties of deep-level defects in dilute GaNAs epitaxial layers grown by atmospheric-pressure metalorganic vapourphase epitaxy (APMOVPE) on the GaAs substrate. Three samples with nitrogen concentrations of 1.2 %, 1.6 % and 2.7 % were investigated. In DLTS and LDLTS spectra of the samples, four predominant electron traps were observed. On the basis of the obtained electrical parameters and previously published results, one of the traps was associated with N-related complex defects, while the other traps with common GaAs-like native defects and impurities, called EL6, EL3 and EL2.