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Characterization of oxidic and organic materials with synchrotron radiation based XPS and XAS

100%

Schmeisser D. , Tallarida M. , Henkel K. , Müller K. , Mandal D. , Chumakov D. , Zschech E.

tom Vol. 27, No. 1

141--157

The use of synchrotron radiation (SR) based X-ray absorption spectroscopy (XAS) and X-ray induced photoelectron spectroscopy (XPS) is demonstrated for the analysis of thin films. In the first part we report on oxidic films used for high-k dielectric films in Si technology and focus on a recent in-situ approach to study the atomic layer deposition growth of HfO2 films. We demonstrate that even hidden layers can be characterized by using fluorescence technologies. In the second part, we demonstrate the suitability of SR based techniques for the analysis of organic thin films. Here, the first example deals with P(VDF-TrFE), a ferroelectric polymer, with possible applications in non-volatile memory devices. Another example concerns the analysis of C60 based low-k polymers for use in Cu interconnect systems.

Optical properties of the Al2O3/SiO2 and Al2O3/HfO2/SiO2 antireflective coatings

88%

Marszalek K. , Winkowski P. , Jaglarz J.

Materials Science Poland

2014

tom Vol. 32, No. 1

80--87

Investigations of bilayer and trilayer Al2O3/SiO2 and Al2O3/HfO2/SiO2 antireflective coatings are presented in this paper. The oxide films were deposited on a heated quartz glass by e-gun evaporation in a vacuum of 5 × 10 -3 [Pa] in the presence of oxygen. Depositions were performed at three different temperatures of the substrates: 100 °C, 200 °C and 300 °C. The coatings were deposited onto optical quartz glass (Corning HPFS). The thickness and deposition rate were controlled with Inficon XTC/2 thickness measuring system. Deposition rate was equal to 0.6 nm/s for Al2O3, 0.6 nm – 0.8 nm/s for HfO2 and 0.6 nm/s for SiO2. Simulations leading to optimization of the thin film thickness and the experimental results of optical measurements, which were carried out during and after the deposition process, have been presented. The optical thickness values, obtained from the measurements performed during the deposition process were as follows: 78 nm/78 nm for Al2O3/SiO2 and 78 nm/156 nm/78 nm for Al2O3 /HfO2/SiO2. The results were then checked by ellipsometric technique. Reflectance of the films depended on the substrate temperature during the deposition process. Starting from 240 nm to the beginning of visible region, the average reflectance of the trilayer system was below 1 % and for the bilayer, minima of the reflectance were equal to 1.6 %, 1.15 % and 0.8 % for deposition temperatures of 100 °C, 200 °C and 300 °C, respectively.

First principles molecular dynamics simulations for amorphous HfO2 and Hf1-xSixO2 systems

88%

Ikeda M. , Kresse G. , Nabatame T. , Toriumi A.

tom Vol. 23, No. 2

401--406

Amorphous phases of HfO2 and Hf1-xSixO2 were obtained using the Projector Augmented Plane Wave method through the melt and quench technique. For the pure HfO2 system, several pore channels appear in the structures. Changes to x in the Hf1-xSixO2 were also studied. As the concentration of Si increases, the size of the pore channels increases, much space appears and two- fold oxygen atoms increase. By calculating the heat of formation energy, it was found that phase separation between amorphous HfO2 and SiO2 occurs at x> 0.1.