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Effect of target power on the physical properties of Ti thin films prepared by DC magnetron sputtering with supported discharge

100%

Kavitha A. , Kannan R. , Rajashabala S.

Materials Science Poland

2017

tom Vol. 35, No. 1

173--180

The present paper describes the effect of target power on the properties of Ti thin films prepared by DC magnetron sputtering with (triode mode) and without (diode mode) supported discharge. The traditional diode magnetron sputtering with an addition of a hot filament has been used to sustain the discharge at a lower pressure. The effect of target power (60, 80, 100 and 120 W) on the physical properties of Ti thin films has been studied in diode and triode modes. XRD studies showed that the Ti thin films prepared at a target power up to 100 W in diode mode were amorphous in nature. The Ti thin films exhibited crystalline structure at much lower target power of 80 W with a preferred orientation along (0 0 2) plane. The grain size of Ti thin films prepared in triode mode increased from 64 nm to 80 nm, whereas in diode mode, the grain size increased from 2 nm to 5 nm. EDAX analysis confirmed that the incorporation of reactive gases was lower in triode mode compared to diode mode. The electrical resistivity of Ti thin films deposited in diode mode was found to be 85 µΩ⋅cm (target power 120 W). The electrical resistivity of Ti thin films in triode mode was found to be deceased to 15.2 µΩ⋅cm (target power 120 W).

Analysis of the Surface Microtexture of Sputtered Indium Tin Oxide Thin Films

88%

Ţălu Ş. , Kulesza S. , Bramowicz M. , Stępień K. , Dastan D.

tom Vol. 66, iss. 2

443--450

The present research work involves the study of the 3-D surface microtexture of sputtered indium tin oxide (ITO) prepared on glass substrates by DC magnetron at room temperature. The samples were annealed at 450°C in air and were distributed into five groups, dependent on ambient combinations applied, as follows: I group, using argon (Ar); II group, using argon with oxygen (Ar+O2); III group, using argon with oxygen and nitrogen (Ar+O2+N2); IV group, using argon with oxygen and hydrogen (Ar+O2+H2); and V group, using argon with oxygen, nitrogen, and hydrogen (Ar+O2+N2+H2). The characterization of the ITO thin film surface microtexture was carried out by atomic force microscopy (AFM). The AFM images were stereometrically quantitatively analyzed to obtain statistical parameters, by ISO 25178-2: 2012 and ASME B46.1-2009. The results have shown that the 3-D surface microtexture parameters change in accordance with different fabrication ambient combinations.

Analysis of the Surface Microtexture of Sputtered Indium Tin Oxide Thin Films

75%

Ţălu Ş. , Kulesza S. , Bramowicz M. , Stępień K. , Dastan D. , Ţălu Ş. , Kulesza S. , Bramowicz M. , Stępień K. , Dastan D.

nr 2

Multifractal characteristics of titanium nitride thin films

75%

Talu S. , Stach S. , Valedbagi S. , Bavadi R. , Elahi S. M. , Talu M.

tom Vol. 33, No. 3

541--548

The study presents a multi-scale microstructural characterization of three-dimensional (3-D) micro-textured surface of titanium nitride (TiN) thin films prepared by reactive DC magnetron sputtering in correlation with substrate temperature variation. Topographical characterization of the surfaces, obtained by atomic force microscopy (AFM) analysis, was realized by an innovative multifractal method which may be applied for AFM data. The surface micromorphology demonstrates that the multifractal geometry of TiN thin films can be characterized at nanometer scale by the generalized dimensions Dq and the singularity spectrum f(α). Furthermore, to improve the 3-D surface characterization according with ISO 25178-2:2012, the most relevant 3-D surface roughness parameters were calculated. To quantify the 3 D nanostructure surface of TiN thin films a multifractal approach was developed and validated, which can be used for the characterization of topographical changes due to the substrate temperature variation.

Structural and optical properties of aluminium nitride thin films fabricated using pulsed laser deposition and dc magnetron sputtering on various substrates

51%

Virt I. , Potera P. , Wisz G. , Dziedzic A. , Cieniek B. , Lopatynskyi I. , Frugynskyi M.

tom Vol. 24, nr 1(79)

5--16

Aluminium nitride thin films were fabricated using pulsed laser deposition and DC magnetron sputtering. Different technological parameters and the effects of different substrates on the optical and structural parameters of AlN samples were studied. An X-ray diffraction study was performed for the layer deposited on the Si3N4 substrate. A high-energy electron diffraction study was also carried out for the layer deposited on a KCl substrate. Transmission spectra of layers on quartz, sapphire, and glass substrates were obtained. An evaluation of the optical band gap of the obtained layers was carried out (Eg form 3.81 to 5.81 eV) and the refractive index was calculated (2.58). The relative density of the film (N1TN-AlN sample) is 1.26 and was calculated using the Lorentz-Lorentz relationship. Layers of aluminium nitride show an amorphous character with a polycrystalline region. It was shown that the properties of AlN films strongly depend on the method, growth conditions, and substrate used.