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Reliability of MIS transistors with plasma deposited Al2O3 gate dielectric film

100%

Szmidt J. , Werbowy A. , Dusiński E. , Zdunek K.

Journal of Telecommunications and Information Technology

2001

tom nr 1

70-75

The paper presents the parameters of MIS transistors with plasma deposited thin film aluminum oxide gate insulator. Al2O3 films were synthesized by means of the low-energy, low-temperature reactive pulse plasma (RPP) method. Investigated transistors, with channel width to length (W/L) ratios of 200/10 [žm/žm] and 200/20 [žm/žm] were manufactured in a standard microelectronic technological laboratory. In order to determine the most important parameters of produced devices there were measured their electrical characteristics. The distribution of the threshold voltage values was studied on a representative set of over two hundred structures.

Laser assisted selective chemical metalization of Al2O3 films

100%

Krumov E. , Popov D. , Starbov N.

Open Chemistry

2005

tom 3

nr 4

668-673

Thick aluminum oxide films are prepared on Al plates by anodizing. On the ceramic surface thus obtained a very thin Ag film is deposited via vacuum thermal evaporation. The Ag/Al2O3/Al samples prepared are irradiated by Nd:YAG laser through a suitable metal mask in order to remove the top metal film in the exposed areas. Thus, a negative silver image of the copied mask is obtained. Further, the samples are processed in Ni electroless chemical bath activated by the rest of silver. All processing steps are studied by scanning electron microscopy (SEM). EDS X-ray mapping is applied to study the final distribution of Al and Ni in the processed areas. In addition, the DC conductivity of the fabricated Ni wires obtained is measured. The proposed new method for selective chemical deposition of electroconductive Ni onto laser microstructured Ag/Al2O3/Al samples is simple, versatile and not restricted to the metal/ceramic system studied as well as to the electroless deposited metal.