We present a double balanced resistive mixer for mobile applications using a 0.35 um MOSFET-Technology. The mixer has been designed for direct conversion receivers with RF - and IF - frequency ranges of 2-3 GHz and DC to 50 MHz, respectively. Excellent performance has been achieved. Typical values are 6 dB conversion loss, 7 dB noise figure, 6.5 dBm 1 dB power compression, 16.5 dBm third order and 55 dBm second order intercept point, and 50 dB isolation between all ports. The mixer does not consume any DC-power and the needed LO-voltage amplitude is 1 V typical. No low frequency noise was detectable down to 10 kHz. We report on the design strategy and present simulated and measured results.
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Recent results on MMICs based on a 90-nm CMOS process are presented. Linear and nonlinear models were developed for the transistors based on S-parameters, noise parameters, and power spectrum measurements. Based on em-simulations, models for multilayer capacitances, MIM-capacitances, various transmission lines etc were also developed. Amplifiers, frequency mixes, and frequency multipliers were then designed, fabricated and characterized. Amplifiers with a gain of 6 and 3,5 dB per stage at 20 and 40 GHz respectively, were demonstrated as well as frequency multipliers from 20 to 40 GHz with 15.8 dB conversion loss, and 30 to 60 GHz multipliers with 15.3 dB conversion loss. Resistive mixers at 20, 40, and 60 GHz were also demonstrated with promissing results.
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