Recently new effects that are not characteristic of undoped lead telluride, such as the Fermi level pinning, giant negative magnetoresistance, were observed in Pb_{1-x}Mn_xTe alloys doped with transition and rare earth elements - Cr, Mo, Yb. We have studied transport and magnetic properties of Pb_{1-x}Mn_xTe doped with another transition element - vanadium. A series of Pb_{1-x}Mn_xTe(V) samples of different composition and degree of doping was investigated. It was observed that the resistivity demonstrates activation behavior at low temperatures for the samples with considerable amount of vanadium as well as for the samples without vanadium. The activation energy is proportional to the Mn content. In some of the samples, photoconductivity was observed at low temperatures. The results are discussed in terms of a model assuming formation of the impurity level by the vanadium impurity and the effect of the Fermi level pinning by this level.
Transport and magnetic properties of Pb_{1-x}Mn_xTe (x<0.18) semiconductor alloys doped with Cr or Mo are investigated in a broad range of temperatures and magnetic fields. In PbMnTe(Cr) alloys the Fermi level may be pinned either in the conduction band or in the energy gap, depending on Mn concentration. In PbMnTe(Mo) alloys the pinning of the Fermi level is observed in the valence band as well as in the energy gap. In the latter case persistent photoconductivity is observed at low temperatures. The analysis of the temperature dependence of magnetic susceptibility shows that PbMnTe alloys doped with Cr or Mo are Curie-Weiss paramagnets revealing weak antiferromagnetic interactions between magnetic ions.
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