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4 Acta Physica Polonica A

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ZnO Nanopowders by a Microwave Hydrothermal Method - Influence of the Precursor Type on Grain Sizes

100%

Wolska E. , Witkowski B. , Godlewski M.

nr 5

683-685

Two series of ZnO nanopowders obtained by a microwave hydrothermal method are examined. We used two different zinc precursors (zinc chloride (ZnCl_2) and zinc nitrate hexahydrate (N_2O_6Zn·6H_2O)). Both types of nanopowders show a bright emission in a visible light, including the band edge emission, which indicates their good crystallographic quality. Results of scanning electron microscopy, photo- and cathodoluminescence investigations are presented.

Cathodoluminescence Profiling for Checking Uniformity of ZnO and ZnCoO Thin Films

75%

Witkowski B. , Łukasiewicz M. , Wolska E. , Kopalko K. , Kowalski B. , Guziewicz E. , Godlewski M.

nr 5

675-677

We employ scanning electron microscopy and cathodoluminescence for evaluation of uniformity of ZnCoO films obtained by the atomic layer deposition. Cathodoluminescence quenching by Co ions allows us to detect (regions of weaker light emission) Co accumulations, with the resolution limited by diffusion length of secondary carriers.

ZnO by ALD - Advantages of the Material Grown at Low Temperature

63%

Guziewicz E. , Godlewski M. , Krajewski T. , Wachnicki Ł. , Łuka G. , Paszkowicz W. , Domagała J. , Przeździecka E. , Łusakowska E. , Witkowski B.

Acta Physica Polonica A

2009

tom 116

nr 5

814-817

The 3D-architecture is a prospective way in miniaturization of electronic devices. However, this approach can be realized only if metal paths are placed not only at the top, but also beneath the electronic parts, which imposes drastic temperature limitations for the electronic device processing. Therefore last years a lot of investigations are focused on materials which can be grown at low temperature with electrical parameters appropriate for electronic applications. Zinc oxide grown by the atomic layer deposition method is one of the materials of choice. We obtained ZnO-ALD films at growth temperature range between 100°C and 200°C, and with controllable electrical parameters. Free carrier concentration was found to scale with deposition temperature, so it is possible to grow ZnO films with desired conductivity without any intentional doping. We used correlation of electrical and optical parameters to optimize the deposition process. Zinc oxide layers obtained in that way have free carrier concentration as low as 10^{16} cm^{-3} and high mobility (10-50 cm^{2}/(Vs)), which satisfies requirements for a material used in three-dimensional memories.

Structure Dependent Conductivity of Ultrathin ZnO Films

63%

Snigurenko D. , Kopalko K. , Krajewski T. , Łuka G. , Gierałtowska S. , Witkowski B. , Godlewski M. , Dybko K. , Paszkowicz W. , Guziewicz E.

nr 6

1042-1044

Zinc oxide films dedicated for hybrid organic/inorganic devices have been studied. The films were grown at low temperature (100°C, 130C and 200°C) required for deposition on thermally unstable organic substrates. ZnO layers were obtained in atomic layer deposition processes with very short purging times in order to shift a structure of the films from polycrystalline towards amorphous one. The correlation between atomic layer deposition growth parameters, a structural quality and electrical properties of ZnO films was determined.

Properties and Characterization of ALD Grown Dielectric Oxides for MIS Structures

63%

Gierałtowska S. , Sztenkiel D. , Guziewicz E. , Godlewski M. , Łuka G. , Witkowski B. , Wachnicki Ł. , Łusakowska E. , Dietl T. , Sawicki M.

nr 5

692-695

We report on an extensive structural and electrical characterization of undergate dielectric oxide insulators Al_2O_3 and HfO_2 grown by atomic layer deposition. We elaborate the atomic layer deposition growth window for these oxides, finding that the 40-100 nm thick layers of both oxides exhibit fine surface flatness and required amorphous structure. These layers constitute a base for further metallic gate evaporation to complete the metal-insulator-semiconductor structure. Our best devices survive energizing up to ≈ 3 MV/cm at 77 K with the leakage current staying below the state-of-the-art level of 1 nA. At these conditions the displaced charge corresponds to a change of the sheet carrier density of 3 × 10^{13} cm^{-2}, which promises an effective modulation of the micromagnetic properties in diluted ferromagnetic semiconductors.