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2 Acta Physica Polonica A

2 1993

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On the Pinning of the Fermi Level by Germanium A_{1}^{0/+} Deep Donor State in GaAs Codoped with Ge and Te

100%

Słupiński T. , Nowak G. , Przybytek J. , Stępniewski R.

nr 4

807-811

We present the possibility of GaAs:Ge,Te crystals growth from the melt (liquid encapsulated Czochralski method) with partially occupied, at ambient pressure, the A_{1} localized electronic state of Ge_{Ga} impurity. In as-grown crystals the amphotericity of Ge and creation of defects (deep acceptor complexes, precipitates etc.) during cooling after growth limit the free electron concentration below the value necessary to populate the A_{1}^{0/+} level. Special annealing of the samples, which enlarges the free electron concentration, was used. The occupation of A_{1}^{0/+} level, at ambient pressure, was observed by pressure dependent Hall effect measurements.

Highly Compensated GaAs Crystal Obtained by Molecular CO Doping

75%

Bożek R. , Korona K. , Nowak G. , Wasik D. , Słupiński T. , Kaczor P.

nr 4

669-672

GaAs:C crystal was grown by liquid encapsulated Czochralski technique with large partial pressure of CO in ambient atmosphere p_{CO}/p_{tot} = 0.2 and investigated using near and infrared absorption, photoluminescence, photoconductivity, photo-induced current transient spectroscopy and photo-Hall measurements. High resistivity of the crystal was found in electrical measurements (10^{7} Ω cm, the Fermi level at 0.67 eV below conduction band at 300 K). Local vibrational mode revealed increased concentration of carbon acceptor and presence of oxygen related complexes. Photoluminescence spectra were dominated by two bands with peak energies at 1.49 eV and 0.8 eV. The near band gap emission shifts with excitation intensity up to 4 meV/decade. In photocurrent spectrum a strong photoionization band with E = 0.55 eV is observed.