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3 Acta Physica Polonica A

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Radiation Degradation of Bipolar Transistor Current Gain

100%

Miskiewicz S. , Komarov A. , Komarov F. , Zayats G. , Soroka S.

Acta Physica Polonica A

2017

tom 132

nr 2

288-290

Spatial distribution of nonequilibrium minority charge carriers in bipolar transistors before and during the radiation exposure is described. Radiation-induced changes in the input and output characteristics and the current gain under the ⁶⁰Co 1.2 MeV γ -rays were calculated. It was shown that the collector current and current gain steadily fall due to irradiation in the considered range in the dose range 0-7×10⁵ rad. The simulation results correlate well with the experimental data obtained at the Research and Production Corporation "Integral".

Simulation of Radiation Effects in SiO₂/Si Structures

86%

Komarov F. , Zayats G. , Komarov A. , Miskiewicz S. , Michailov V. , Komsta H.

Acta Physica Polonica A

2015

tom 128

nr 5

857-860

The space-time evolution of electric charge induced in the dielectric layer of simulated metal-insulator-semiconductor structures due to irradiation with X-rays is discussed. The system of equations used as a basis for the simulation model is solved iteratively by the efficient numerical method. The obtained simulation results correlate well with the respective data presented in other scientific publications.

Modeling of Thermal Processing at the Formation of Shallow Doped IC Active Regions

86%

Komarov A. , Velichko O. , Zayats G. , Komarov F. , Miskiewicz S. , Mironov A. , Makarevich Y.

Acta Physica Polonica A

2013

tom 123

nr 5

804-808

Physical and mathematical models as well as numerical algorithms for simulation of advanced technological processes, such as thermal annealing after low-energy ion implantation used during the VLSI fabrication are presented. In this paper we propose a model that treats the migration of the impurity atoms at the thermal annealing. We take into account process nonlinearity and influence of non-uniform defects distribution as well as electric field and elastic stress on the migration of atoms. The redistribution of point defects as well as the diffusion of nonequilibrium impurity interstitials in silicon are described by time-dependent quasi-linear parabolic equations. The results of numerical calculations are presented as well.