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2 Acta Physica Polonica A

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Energy and Optical Absorption Spectra of Multiply Charged Anisotropic Quantum Boxes

100%

Trojnar A. , Małachowski T. , Wójs A.

nr 2

173-176

Using a simple model of a two-dimensional rectangular quantum box we study the effects of size and anisotropy on the energy and photoluminescence spectra of neutral and charged quantum dots. The competition of symmetries and energy/length scales of the free exciton or trion and of the confining potential is analyzed. The numerical calculations consisted of the diagonalization of the few-electron-hole Hamiltonian matrices in the full configuration-interaction basis, with the simultaneous resolution of the conserved orbital and spin quantum numbers.

Electronic Properties of Thin HfO_2 Films Fabricated by Atomic Layer Deposition on 4H-SiC

63%

Taube A. , Gierałtowska S. , Gutt T. , Małachowski T. , Pasternak I. , Wojciechowski T. , Rzodkiewicz W. , Sawicki M. , Piotrowska A.

nr 5

696-698

Applicability of thin HfO_2 films as gate dielectric for SiC MOSFET transistor is reported. Layers characterisation was done by means of atomic force microscopy and scanning electron microscopy, spectroscopic ellipsometry and C-V and I-V measurements of MIS structures. High permittivity dielectric layers were deposited using atomic layer deposition. Investigation showed high value of κ = 15 and existence of high density surface states (5 × 10^{12} eV^{-1} cm^{-2}) on HfO_2/SiC interface. High leakage current is caused probably due to low conduction band offset between hafnium oxide and silicon carbide.