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EN
The hydrogen ion beam induced luminescence of gadolinium oxide Gd_2O_3 doped with 1% of holmium (Ho) and 1% of bismuth (Bi) was investigated. Degradation of the holmium related 549 nm ion beam induced luminescence line intensity during hydrogen ion irradiation was observed. Two different mechanisms of the ion beam induced luminescence degradation has been proposed: the first one related to the accumulation of ion induced target material damage and the second mechanism related to the target temperature growth during ion beam bombardment. The experimental method for separation of both mechanisms effects was proposed and demonstrated.
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Content available remote Structural and Functional Properties of Ion Beam Modified Elastomers
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EN
Studies on the use of energetic ion beams for material modification have been initiated originally within the Manhattan project and have been continuously developed since then. The consecutive steps were devoted to the studies of ion implantation into semiconductors, metals, ceramics and, most recently, organic materials. One of the latest areas of applications is modification of elastomers, commonly known as rubbers. In the present paper the results of the studies on structural and functional properties of irradiated elastomers will be presented with the special emphasis on the materials used in aviation and military applications. Among the structural modifications, a massive loss of hydrogen atoms appears as the most peculiar characteristic of irradiated elastomers. Functional properties of irradiated rubbers: microhardness and friction coefficient, will be presented and application potential of the materials discussed.
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Content available remote Damage Accumulation in Nuclear Ceramics
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EN
Ceramics are key engineering materials in many industrial domains. The evaluation of radiation damage in ceramics placed in a radiative environment is a challenging problem for electronic, space and nuclear industries. Ion beams delivered by various types of accelerators are very efficient tools to simulate the interactions involved during the slowing-down of energetic particles. This article presents a review of the radiation effects occurring in nuclear ceramics, with an emphasis on new results concerning the damage build-up. Ions with energies in the keV-GeV range are considered for this study in order to explore both regimes of nuclear collisions (at low energy) and electronic excitations (at high energy). The recovery, by electronic excitation, of the damage created by ballistic collisions (swift heavy ion beam induced epitaxial recrystallization process) is also reported.
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EN
The influence of He^+ ion bombardment on magnetoresistance, magnetization reversal and domain structure of sputtered (Ni_{80}Fe_{20}(2 nm)/Au(2 nm)/Co(0.6 nm)/Au(2 nm))_{10} multilayers was investigated. The samples were bombarded using He^+(30 keV) ions with fluences D varied from 10^{13} to 3×10^{16} He^+/cm^{2}. With increasing D the following changes in magnetic properties were observed: (i) exponential decay of the saturation field of Co layers, (ii) progressive decrease in magnetoresistance as a result of degradation of Co layers perpendicular anisotropy, (iii) linear decrease in stripe domain period with log(D).
EN
We studied narrow (submicron) constrictions in the layers of ferromagnetic semiconductor (Ga,Mn)As. We have demonstrated a contribution of the quantum localization effects to the magnetoresistance of the constricted samples. We have also found a negative contribution of a domain wall trapped in the constriction to the resistance, due presumably to the erasing of the localization effects by the domain wall.
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Content available remote Analysis of Crystal Lattice Deformation by Ion Channeling
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EN
A model of dislocations has been developed for the use in Monte Carlo simulations of ion channeling spectra obtained for defected crystals. High resolution transmission electron microscopy micrographs show that the dominant type of defects in the majority of ion irradiated crystals are dislocations. The RBS/channeling spectrum is then composed of two components: one is due to direct scattering on randomly displaced atoms and the second one is related to beam defocussing on dislocations, which produce predominantly crystal lattice distortions, i.e. bent channels. In order to provide a correct analysis of backscattering spectra for the crystals containing dislocations we have modified the existing Monte Carlo simulation code "McChasy". A new version of the code has been developed by implementing dislocations on the basis of the Peierls-Nabarro model. Parameters of the model have been determined from the high resolution transmission electron microscopy data. The newly developed method has been used to study the Ar-ion bombarded SrTiO_3 samples. The best fit to the Rutherford backscattering/channeling spectra has been obtained by optimizing the linear combination of two kinds of defects: displaced atoms and bent channels. The great virtue of the Monte Carlo simulation is that unlike a traditional dechanneling analysis it allows quantitative analysis of crystals containing a mixture of different types of defects.
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