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Epitaxy on GaN bulk crystals

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Leszczyński M. , Prystawko P. , Czernecki R. , Lehnert J. , Perlin P. , Wiśniewski P. , Skierbiszewski C. , Suski T. , Nowak G. , Karouta F. , Holst J. , Grzegory I. , Porowski S.

Opto-Electronics Review

2001

tom Vol. 9, No. 2

125-128

The article shows the most important experimental results describing the properties of nitride layers on GaN single crystals. The layers were grown using matalorganic chemical vapour deposition (MOCVD). The growth was monitored by in-situ laser reflectometry. The layers contain very small dislocation density of about 10-10³ cm⁻² (the same as in the GaN substrates). Morphology and crystallographic quality was examined using atomic force microscopy and X-ray diffraction. The layers have exellent photoluminescent properties what has a direct impact on the optoelectronic device properties.

AlGaN/GaN HEMT’s photoresponse to high intensity THz radiation

100%

Dyakonova N. , But D. B. , Coquillat D. , Knap W. , Drexler C. , Olbrich P. , Karch J. , Schafberger M. , Ganichev S. D. , Ducournau G. , Gaquiere C. , Poisson M. A. , Delage S. , Cywinski G. , Skierbiszewski C.

Opto-Electronics Review

2015

tom Vol. 23, No. 3

195-199

We report on the photoresponse dependence on the terahertz radiation intensity in AlGaN/GaN HEMTs. We show that the AlGaN/GaN HEMT can be used as a THz detector in CW and in pulsed regime up to radiation intensity of several kW/cm². The dynamic range in the pulsed regime of detection can be more than 2 decades. We observed that the photoresponse of the HEMT could have a compound composition if two independent parts of the transistor are involved in the detection process; this result indicates that a more simple one channel device may be preferable on the detection purpose.