PL
 |
EN
Ten serwis zostanie wyłączony 2025-02-11.
Nowa wersja platformy, zawierająca wyłącznie zasoby pełnotekstowe, jest już dostępna.
Przejdź na https://bibliotekanauki.pl
Preferencje help
Polish version English version Język
Widoczny [Schowaj] Abstrakt
Liczba wyników

Znaleziono wyników: 10

Liczba wyników na stronie
first rewind previous Strona / 1 next fast forward last
Wyniki wyszukiwania
help Sortuj według:

help Ogranicz wyniki do:
first rewind previous Strona / 1 next fast forward last
1
Content available remote Contribution of Mn 3d Electrons To the Valence Band of Sn_{0.9}Mn_{0.1}te
100%
Nadolny A. , Guziewicz E. , Kowalski B. , Orłowski B. , Johnson R.
Acta Physica Polonica A
|
1998
|
tom 94
|
nr 3
454-458
EN
The synchrotron radiation in the energy range between 15 and 70 eV was used to investigate the electronic structure of the crystalline Sn_{0.9}Mn_{0.1}Te by means of the resonant photoemission spectroscopy. Fano-type resonance has been observed in the obtained constant initial energy curves with the resonant energy 50.6 eV and antiresonant energy 49.0 eV. The energy distribution curves taken at photon energies close to the Mn 3p-3d transitions allow us to conclude that Mn atoms contribute to the valence band mainly at energies of 4.0 eV and 7.8 eV below the valence band edge.
2
Content available remote Valence Band Density of States and Mn 3d Contribution in Mn_{1-x}Mg_{x}Te
86%
Kowalski B. , Guziewicz E. , Kopalko K. , Orłowski B. , Janik E. , Wojtowicz T. , Johnson R.
Acta Physica Polonica A
|
1998
|
tom 94
|
nr 3
401-405
EN
Resonant photoemission spectroscopy was applied to determine the Mn 3d derived contribution to the valence band density of states of Mn_{0.44} Mg_{0.56}Te grown by molecular beam epitaxy on a GaAs(001) substrate. The modifications of the valence band density-of-states distribution are discussed as a consequence of the substitution of Mg ions for Mn ions.
3
Content available Band Structure of Mn/ZnTe Studied, by Angle-Resolved Photoelectron Spectroscopy
86%
Kowalski B. , Orlowski B. , Pietrzyk M. , Kaczor P. , Kopalko K. , Mickievicius S. , Johnson R.
Acta Physica Polonica A
|
2005
|
tom 108
|
nr 5
735-740
EN
The electronic band structure of Mn/ZnTe(110) (1×1) has been studied by angle-resolved photoelectron spectroscopy. The sets of spectra were acquired for the clean surface and after in situ deposition of 0.4 ML of Mn, in order to compare the band structures and to reveal changes brought about by the presence of Mn. The experimental band structure diagram of Mn/ZnTe along theΓ-K direction in the Brillouin zone has been derived from the experimental data. Indications of interaction between the Mn 3d states and sp^3 bands of the semiconductor are discussed.
4
Content available remote 4f Contribution to Valence Band of Pb_{1-x}RE_{x}S (RE = Eu,Gd) Studied by Resonant Photoemission
86%
Kowalski B. , Gołacki Z. , Guziewicz E. , Orłowski B. , Ghijsen J. , Johnson R.
Acta Physica Polonica A
|
1996
|
tom 90
|
nr 5
1035-1039
EN
Resonant photoemission experiments were carried out in order to reveal the contributions of partly filled Eu 4f^{7} and Gd 4f^{7} shells to the valence bands of Pb_{0.95}Eu_{0.05}S and Pb_{0.95}Gd_{0.05}S crystals. The coupling between these orbitals and the host electronic states is discussed.
5
Content available remote Resonant Photoemission Study of Mn 3d Electrons Contribution to the Pb_{0.92}Mn_{0.08}Se Valence Band
86%
Orłowski B. , Kowalski B. , Le K. , Gałązka R. , Ghijsen J. , Johnson R.
Acta Physica Polonica A
|
1995
|
tom 87
|
nr 2
329-332
EN
The resonant photoemission spectroscopy was applied to investigate the valence band electronic structure of semimagnetic semiconductor Pb_{0.92}Mn_{0.08}Se crystal and to determine the contribution of Mn 3d electrons to the valence band. The set of energy distribution curves and constant initial states spectra were taken for by energies in the region (40-60 eV) close to the Mn 3p-3d transition. The electrons Mn 3d hybridize and contribute to the valence band electrons of the crystal and main density of states contribution appears in the energy 3.5 ± 0.2 eV below the valence band edge.
6
Content available Fano Resonance of Eu^{2+} and Eu^{3+} in (Eu,Gd)Te MBE Layers
72%
Orlowski B. , Kowalski B. , Dziawa P. , Pietrzyk M. , Mickievicius S. , Osinniy V. , Taliashvili B. , Kowalik I. , Story T. , Johnson R.
Acta Physica Polonica A
|
2005
|
tom 108
|
nr 5
803-807
EN
Resonant photoemission spectroscopy, with application of synchrotron radiation, was used to study the valence band electronic structure of clean surface of (EuGd)Te layers. Fano-type resonant photoemission spectra corresponding to the Eu 4d-4f transition were measured to determine the contribution of 4f electrons of Eu^{2+} and Eu^{3+} ions to the valence band. The resonant and antiresonant photon energies of Eu^{2+} ions were found as equal to 141 V and 132 eV, respectively and for Eu^{3+} ions were found as equal to 146 eV and 132 eV, respectively. Contribution of Eu^{2+}4f electrons was found at the valence band edge while for Eu^{3+} it was located in the region between 3.5 eV and 8.5 eV below the valence band edge.
7
Content available remote Photoemission Study of Mn 3d Electrons in the Valence Band of Mn/GeMnTe
72%
Pietrzyk M. , Kowalski B. , Orłowski B. , Knoff W. , Osinniy V. , Kowalik I. , Story T. , Johnson R.
Acta Physica Polonica A
|
2007
|
tom 112
|
nr 2
275-281
EN
We present the results of the electronic band structure study of Ge_{0.9}Mn_{0.1}Te epilayers, clean and modified in situ by deposition of manganese atoms. The sets of resonant photoemission spectra were measured for the photon energy range covering the energy of Mn 3p→3d transition (45
8
Content available remote Fano Resonance Investigation of PbTe Layers Containing Eu and Gd Ions
72%
Orlowski B. , Osinniy V. , Dziawa P. , Pietrzyk M. , Kowalski B. , Taliashvili B. , Story T. , Johnson R.
Acta Physica Polonica A
|
2008
|
tom 114
|
nr 2
351-356
EN
The Fano resonance photoemission studies of Gd/(Pb, Gd)Te layers using synchrotron radiation were carried out and the electronic structure parameters like binding energies of Gd^{3+} 4f and 5p shells, resonance and antiresonance energies for Gd^{3+} were determined. The presence of Eu^{3+} ions was observed in the (Pb, Eu)Te and (Eu, Gd)Te layers grown by MBE technique. The comparison of data for (Pb, Gd)Te compound with corresponding data for (Eu, Gd)Te and (Pb, Eu)Te layers indicates that we are not able to distinct the Eu^{3+}4f and Gd^{3+}4f electrons contribution to the valence band photoemission spectra because of small content od Gd and similar binding energy values. The key parameters allowing to prove exactly the presence of either Eu^{3+} or Gd^{3+} are the resonance and antiresonance energies which are significantly different for these ions and equal to 143 eV/137 eV and 150 eV/142 eV, respectively.
9
Content available remote A Comparison of the Valence Band Structure of Bulk and Epitaxial GeTe-based Diluted Magnetic Semiconductors
72%
Pietrzyk M. , Kowalski B. , Orlowski B. , Knoff W. , Story T. , Dobrowolski W. , Slynko V. , Slynko E. , Johnson R.
Acta Physica Polonica A
|
2010
|
tom 117
|
nr 2
293-295
EN
In this work we present a comparison of the experimental results, which have been obtained by the resonant photoelectron spectroscopy for a set of selected diluted magnetic semiconductors based on GeTe, doped with manganese. The photoemission spectra are acquired for the photon energy range of 40-60 eV, corresponding to the Mn 3p → 3d resonances. The spectral features related to Mn 3d states are revealed in the emission from the valence band. The Mn 3d states contribution manifests itself in the whole valence band with a maximum at the binding energy of 3.8 eV.
10
Content available remote Influence of Yb on Valence Band Density of States of CdYbTe and PbYbTe - a Resonant Photoemission Study
58%
Szamota-Sadowska K. , Kowalski B. , Guziewicz E. , Orłowski B. , Sadowski J. , Gołacki Z. , Ghijsen J. , Johnson R. , Belkhou R. , Radosavkič D. , Martinotti D. , Barrett N. , Guillot C.
Acta Physica Polonica A
|
1996
|
tom 90
|
nr 5
943-946
EN
Photoemission measurements using synchrotron radiation were performed on PbYbTe (bulk crystal) and CdYbTe (MBE thin film). The resonant enhancement of the photoemission was applied for investigation of the contribution of Yb 4f electrons to the valence band. The set of the energy distribution curves was collected for energies in the region close to the 4d-4f Fano transition. The Yb 4f^{14} were observed at the binding energies close to the edge of the valence band while the 4f^{13} states were revealed deep in the valence band.
first rewind previous Strona / 1 next fast forward last
JavaScript jest wyłączony w Twojej przeglądarce internetowej. Włącz go, a następnie odśwież stronę, aby móc w pełni z niej korzystać.